Predicted genetic burden and frequency of phenotype-associated variants in the horse von Durward-Akhurst, S. A., Marlowe, J. L., Schaefer, R. J., Springer, K., Grantham, B., Carey, W. K., Bellone, R. R., Mickelson, J. R., McCue, M. E.

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Genetic Variation and the Distribution of Variant Types in the Horse von Durward-Akhurst, S. A., Schaefer, R. J., Grantham, B., Carey, W. K., Mickelson, J. R., McCue, M. E.

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Regularity-preserving image interpolation von Carey, W.K., Chuang, D.B., Hemami, S.S.

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Smoothness-constrained quantization for wavelet image compression von Carey, W.K., Hemami, S.S., Heller, P.N.

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High-precision band-gap determination of Al0.48In0.52As with optical and structural methods von OERTEL, D, BIMBERG, D, BAUER, R. K, CAREY, K. W

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Dopant-type selective electroless photoetching of Zn-diffused InP and InGaAs/InP heterostructures von WILLIAMSON, J. B, CAREY, K. W

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Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy von CAREY, K. W, HULL, R, FOUQUET, J. E, KELLERT, F. G, TROTT, G. R

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Nursing2001 salary survey von MEE, CHERYL L

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Nursing2000 salary survey von Mee, C L, Carey, K W

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Structural characterization of low-defect-density silicon on sapphire von CAREY, K. W, PONCE, F. A, AMANO, J, ARANOVICH, J

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Detailed atomic scale structure of AlInAs/GaInAs quantum wells von BIMBERG, D, OERTEL, D, HULL, R, REID, G. A, CAREY, K. W

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IIIA-8 front-side illuminated InP/GaInAs/InP p-i-n photodiode with FWHM < 26 picoseconds von Wang, S.Y., Carey, K.W.

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Leakage current in GaInAs/InP photodiodes grown by OMVPE von Carey, Kent W., Wang, Shih-Yuan, Chang, James S.C., Nauka, K.

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A front-side-illuminated InP/GaInAs/InP p-i-n photodiode with a -3-dB bandwidth in excess of 18 GHz von Wang, S Y, Carey, K W, Kolner, B H

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Crofelemer, a novel antisecretory agent approved for the treatment of HIV-associated diarrhea von Yeo, Q M, Crutchley, R, Cottreau, J, Tucker, A, Garey, K W

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Low-defect-density silicon on sapphire von Amano, Jun, Carey, Kent W.

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Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes von Carey, K.W., Wang, S.Y., Hull, R., Turner, J.E., Oertel, D., Bauer, R., Bimberg, D.

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Organometallic vapor phase epitaxial growth and characterization of high purity GalnAs on InP von CAREY, K. W

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How's your job security? von Meissner, J E, Carey, K W

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Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP von Carey, Kent W.

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