Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge von Rodríguez-Bolívar, S, Gómez-Campos, F M, Carceller, J E

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Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers von Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Cartujo-Cassinello, P., Carceller, J. E.

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Modeling the transition from ohmic to space charge limited current in organic semiconductors von López Varo, P., Jiménez Tejada, J.A., López Villanueva, J.A., Carceller, J.E., Deen, M.J.

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Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors von Gámiz, F., Roldán, J. B., Carceller, J. E., Cartujo, P.

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Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration von Gámiz, F., Roldán, J. B., Godoy, A., Cartujo-Cassinello, P., Carceller, J. E.

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Contact effects in compact models of organic thin film transistors: Application to zinc phthalocyanine-based transistors von Jiménez Tejada, J.A., Awawdeh, K.M., Villanueva, J.A. López, Carceller, J.E., Deen, M.J., Chaure, N.B., Basova, Tamara, Ray, A.K.

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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs von Gámiz, F, Godoy, A, Roldán, J B, Carceller, J E, Cartujo, P

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A simple model for analysing the effects of band non-parabolicity in nanostructures von López-Villanueva, J A, Jiménez-Tejada, J A, Palma, A, Rodríguez Bolívar, S, Carceller, J E

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Image and exchange-correlation effects in double gate silicon-on-insulator transistors von Gámiz, F, Cartujo-Cassinello, P, Jiménez-Molinos, F, Carceller, J.E, Cartujo, P

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Universality of electron mobility curves in MOSFETs: a Monte Carlo study von Gamiz, F., Lopez-Villanueva, J.A., Banqueri, J., Carceller, J.E., Cartujo, P.

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Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers von Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., Carceller, J. E., López-Villanueva, J. A., Rodriguez, S.

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Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory von Rodrı́guez, Salvador, López-Villanueva, Juan A., Melchor, I., Carceller, J. E.

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A new approach to analyzing anisotropic and non-parabolic effects on quantum wires von Gómez-Campos, F. M., Rodríguez-Bolívar, S., Carceller, J. E.

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Modeling effects of electron-velocity overshoot in a MOSFET von Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Carceller, J.E.

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A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices von Gómez-Campos, F.M., Rodríguez-Bolívar, S., Jiménez-Tejada, J.A., Carceller, J.E.

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The dependence of the electron mobility on the longitudinal electric field in MOSFETs von Roldán, J B, Gámiz, F, López-Villanueva, J A, Carceller, J E, Cartujo, P

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Electron transport in ultrathin double-gate SOI devices von Gámiz, F, Roldán, J.B, López-Villanueva, J.A, Jiménez-Molinos, F, Carceller, J.E

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Bandgap calculation in Si quantum dot arrays using a genetic algorithm von Gómez-Campos, F.M., Rodríguez-Bolívar, S., de Jong van Coevorden, C.M., Luque-Rodríguez, A., Lara-Bullejos, P., Carceller, J.E.

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Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects von Rodríguez, Salvador, López-Villanueva, Juan A, Cartujo, P, Carceller, J E

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Influence of technological parameters on the behavior of the hole effective mass in SiGe structures von Rodrı́guez, Salvador, Gámiz, F., Palma, A., Cartujo, P., Carceller, J. E.

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