Study of the Structure−Properties Relationship of Phenolic Molecular Glass Resists for Next Generation Photolithography von De Silva, Anuja, Lee, Jin-Kyun, André, Xavier, Felix, Nelson M, Cao, Heidi B, Deng, Hai, Ober, Christopher K

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Diazonaphthoquinone Molecular Glass Photoresists:  Patterning without Chemical Amplification von Bratton, Daniel, Ayothi, Ramakrishnan, Deng, Hai, Cao, Heidi B, Ober, Christopher K

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Line edge roughness of a latent image in post-optical lithography von Saeki, Akinori, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B

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Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model von Saeki, Akinori, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B, Deng, Hai, Leeson, Michael J

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Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography von SEUNG WOOK CHANG, AYOTHI, Ramakrishnan, BRATTON, Daniel, DA YANG, FELIX, Nelson, COO, Heidi B, HAI DENG, OBER, Christopher K

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Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists von Yamamoto, Hiroki, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B., Deng, Hai, Leeson, Michael J.

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Arylonium Photoacid Generators Containing Environmentally Compatible Aryloxyperfluoroalkanesulfonate Groups von Ayothi, Ramakrishnan, Yi, Cao, Heidi B., Yueh, Wang, Putna, Steve, Ober, Christopher K.

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Correlation between proton dynamics and line edge roughness in chemically amplified resist for post-optical lithography von Saeki, Akinori, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B.

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Silicon Containing Organic-Inorganic Hybrid Materials as EUV Photoresists von Kwark, Young-Je, Bravo-Vasquez, J. Pablo, Cao, Heidi B., Deng, Hai, Ober, Christopher K.

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Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography von Saeki, Akinori, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B., Deng, Hai, Leeson, Michael J.

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Acid distribution in chemically amplified extreme ultraviolet resist von Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B., Deng, Hai, Leeson, Michael J.

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Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms von Cao, Heidi B., Nealey, Paul F., Domke, Wolf-Dieter

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Deformation of Nanoscopic Polymer Structures in Response to Well-Defined Capillary Forces von Stoykovich, M.P., Cao, H.B., Yoshimoto, K., Ocola, L.E., Nealey, P.F.

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New PFOS Free Photoresist Systems for EUV Lithography von Ayothi, Ramakrishnan, Chang, Seung Wook, Felix, Nelson, Cao, Heiji B., Deng, Hai, Yueh, Wang, Ober, Christopher K.

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Lithographic flare measurements of Intel’s microexposure tool optics von Chandhok, Manish, Lee, Sang H., Roberts, Jeanette, Rice, Bryan J., Cao, Heidi B.

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Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages von CAO HEIDI B, YUEH WANG

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Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages von Yueh, Wang, Cao, Heidi B

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Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages von CAO HEIDI B, YUEH WANG

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Correlation between proton dynamics and line edge roughnessin chemically amplified resist for post-optical lithography von Saeki, Akinori, Kozawa, Takahiro, Tagawa, Seiichi, Cao, Heidi B.

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Photoactive adhesion promoter in a slam von Meagley, Robert P, Cao, Heidi B, O'Brien, Kevin P

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