Radiation hardness of gallium nitride von Ionascut-Nedelcescu, A., Carlone, C., Houdayer, A., von Bardeleben, H.J., Cantin, J.-L., Raymond, S.

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Electron paramagnetic resonance study of Zn1–xCoxO: A predicted high-temperature ferromagnetic semiconductor von Jedrecy, Nathalie, von Bardeleben, H.J., Zheng, Yunlin Jacques, Cantin, J.-L.

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Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC von Cantin, Jean-Louis, von Bardeleben, J., Shishkin, Y., Ke, Y., P. Devaty, R., J. Choyke, W.

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Hydrogen passivation of carbon P-b like centers at the 3C-and 4H-SiC/SiO2 interfaces in oxidized porous SiC von Cantin, Jean-Louis, von Bardeleben, Jurgen, Ke, Y, Devaty, Rp, Choyke, Wj

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Magnetic interactions in Zn1−xMnxO studied by electron paramagnetic resonance spectroscopy von Chikoidze, E., von Bardeleben, H. J., Dumont, Y., Galtier, P., Cantin, J. L.

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An electron paramagnetic resonance study of the Si[formula omitted]/Al2O3 interface defects von Cantin, J.L., von Bardeleben, H.J.

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Spins and microstructure of amorphous carbon von von Bardeleben, H.J, Cantin, J.L, Zellama, K, Zeinert, A

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The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal... von Vickridge, I.C., Ganem, J.J., Trimaille, I., Cantin, J.-L.

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Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study von von Bardeleben, H. J., Cantin, J. L., Zeinert, A., Racine, B., Zellama, K., Hai, P. N.

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Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals von Cantin, J.L., Shishkin, Y., von Bardeleben, Hans Jürgen, Devaty, Robert P., Choyke, Wolfgang J., Ke, L.

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Electron paramagnetic resonance study of proton implantation induced defects in monocrystalline 4H– and 6H–SiC von von Bardeleben, H.J, Cantin, J.L

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Nitrogen split interstitial center (N-N)N in GaN : high frequency EPR and ENDOR study von von Bardeleben, HJ, Cantin, JL, Vrielinck, Henk, Callens, Freddy, Binet, L, Rauls, E, Gerstmann, U

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Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC von Cantin, J.L., Shishkin, Y., von Bardeleben, Hans Jürgen, Devaty, Robert P., Choyke, Wolfgang J.

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EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC von Cantin, J.L., von Bardeleben, Hans Jürgen

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Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC von Cantin, J.L., von Bardeleben, Hans Jürgen, Feldman, Leonard C., Song, Yong Wei, Williams, John R., Dhar, S., Shishkin, Y., Vickridge, I., Devaty, Robert P., Choyke, Wolfgang J., Ke, L.

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SB7: the new bending-magnet double-headed dragon beamline at SuperACO von Sirotti, Fausto, Polack, Francois, Cantin, Jean Louis, Sacchi, Maurizio, Delaunay, Renaud, Meyer, Michael, Liberati, Marco

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Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations von Gosset, L. G., Ganem, J. J., von Bardeleben, H. J., Rigo, S., Trimaille, I., Cantin, J. L., Åkermark, T., Vickridge, I. C.

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Anodic oxidation of p- and p+-type porous silicon: surface structural transformations and oxide formation von Cantin, J.L, Schoisswohl, M, Grosman, A, Lebib, S, Ortega, C, von Berdeleben, H.J, Vázsonyi, É, Jalsovszky, G, Erostyák, J

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RBS-Channeling and EPR Studies of Damage in 2 MeV Al2+-Implanted 6H-SiC Substrates von Cantin, J.L., von Bardeleben, Hans Jürgen, Respaldiza, M.A., Morilla, Y., García López, J., Battistig, Gábor, Cheang-Wong, Juan Carlos

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SiGe/SiGeO2 interface defects von Lebib, S., Schoisswohl, M., Cantin, J.L., von Bardeleben, H.J.

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