Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches von Barcellona, M., Badalà, P., Boscaglia, M., Cantiano, M., Mello, D., Ferlito, E., Pirnaci, M.D., Tenaglia, D., Fragalà, M.E.

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Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison von Albertazzi, E., Bianconi, M., Lulli, G., Nipoti, R., Cantiano, M.

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RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for 〈100〉 axial dechanneling of He in silicon von Bianconi, M., Nipoti, R., Cantiano, M., Gasparotto, A., Sambo, A.

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Ion versus neutral irradiation of thin films of amorphous SiO2: an in situ X-ray photoelectron spectroscopy study von Torrisi, Alberto, Licciardello, Antonino, Ancarani, Valentina, Cantiano, Massimiliano, Puglisi, Orazio

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