Ultra-broad gain quantum cascade lasers tunable from 6.5 to 10.4 μm von Xie, Feng, Caneau, C, Leblanc, H, Ho, M-T, Zah, C

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Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs-InP DBR Grown by MOCVD von Nishiyama, N., Caneau, C., Hall, B., Guryanov, G., Hu, M.H., Liu, X.S., Li, M.-J., Bhat, R., Zah, C.E.

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30% external quantum efficiency from surface textured, thin-film light-emitting diodes von SCHNITZER, I, YABLONOVITCH, E, CANEAU, C, GMITTER, T. J, SCHERER, A

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High efficiency long wavelength VCSEL on InP grown by MOCVD von Nishiyama, N., Caneau, C., Guryanov, G., Liu, X.S., Hu, M., Zah, C.E.

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Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures von SCHNITZER, I, YABLONOVITCH, E, CANEAU, C, GMITTER, T. J

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All-optical inverter based on long-wavelength vertical-cavity surface-emitting laser von Onishi, Y., Nishiyama, N., Caneau, C., Koyama, F., Chung-en Zah

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10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- μm InP-based vertical-cavity surface-emitting lasers von Nishiyama, N., Caneau, C., Tsuda, S., Guryanov, G., Hu, M., Bhat, R., Chung-En Zah

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Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition von Bhat, R, Caneau, C, Salamanca-Riba, Lourdes, Bi, W, Tu, C

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Dynamic behavior of an all-optical inverter using transverse-mode switching in 1.55-μm vertical-cavity surface-emitting lasers von Onishi, Y., Nishiyama, N., Caneau, C., Koyama, F., Chung-en Zah

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High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers von Fay, P., Caneau, C., Adesida, I.

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Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP von Mahajan, A., Arafa, M., Fay, P., Caneau, C., Adesida, I.

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Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding von Yoo, S. J. B., Caneau, C., Bhat, R., Koza, M. A., Rajhel, A., Antoniades, Neo

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Tunable Optical Equalizer Using Diffraction Grating Filters von Xiaoxue Zhao, Hasebe, K., Sakaguchi, T., Koyama, F., Chang-Hasnain, C.J., Nishiyama, N., Caneau, C., Chung-En Zah

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SIMS quantitative depth profiling of matrix elements in semiconductor layers von Guryanov, G., St. Clair, T.P., Bhat, R., Caneau, C., Nikishin, S., Borisov, B., Budrevich, A.

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Watt-Level Room Temperature Continuous-Wave Operation of Quantum Cascade Lasers With λ >10 μm von Feng Xie, Caneau, C., Leblanc, H. P., Caffey, D. P., Hughes, L. C., Day, T., Chung-en Zah

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GaInAsP lateral current injection lasers on semi-insulating substrates von Oe, K., Noguchi, Y., Caneau, C.

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Nonlinear optical input–output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers von Onishi, Y., Koyama, F., Nishiyama, N., Caneau, C., Zah, C. E.

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Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors von Yuan, Y., Brock, T., Bhattacharya, P., Caneau, C., Bhat, R.

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10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- [mu]m InP-based vertical-cavity surface-emitting lasers von N. Nishiyama, N. Nishiyama, C. Caneau, C. Caneau, S. Tsuda, S. Tsuda, G. Guryanov, G. Guryanov, M. Hu, M. Hu, R. Bhat, R. Bhat, Chung-En Zah, Chung-En Zah

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Testing of high-power semiconductor laser bars von Hu, M.H., Xingsheng Liu, Caneau, C., Yabo Li, Bhat, R., Kechang Song, Chung-En Zah

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