Gettering of metals by voids in silicon von Raineri, V., Fallica, P. G., Percolla, G., Battaglia, A., Barbagallo, M., Campisano, S. U.

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Secondary defect dissolution by voids in silicon von Raineri, V., Campisano, S. U.

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Erbium in oxygen-doped silicon: Optical excitation von van den Hoven, G. N., Shin, Jung H., Polman, A., Lombardo, S., Campisano, S. U.

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Voids in silicon as sink for interstitials von Raineri, V., Campisano, S.U.

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Trap-limited migration of Si self-interstitials at room temperature von Kyllesbech Larsen K, Privitera, V, V, Coffa, S, Priolo, F, Campisano, SU, Carnera, A

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Erbium in oxygen-doped silicon: Electroluminescence von Lombardo, S., Campisano, S. U., van den Hoven, G. N., Polman, A.

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Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping von Lombardo, Salvatore, Campisano, Salvatore Ugo

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Mechanisms of amorphization in ion implanted crystalline silicon von Campisano, S.U., Coffa, S., Raineri, V., Priolo, F., Rimini, E.

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Silicon-on-insulator produced by helium implantation and thermal oxidation von Raineri, V., Campisano, S. U.

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Mechanisms of amorphization in crystalline silicon von BATTAGLIA, A, CAMPISANO, S. U

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Rapid Solidification in Silicon von Campisano, S.U.

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The effect of reactive plasma etching on the transient enhanced diffusion of boron in silicon von Privitera, Vittorio, Priolo, Francesco, Mannino, Giovanni, Campisano, Salvatore Ugo, Carnera, Alberto, Arena, Giuseppe, Spinella, Corrado

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Nanocrystal size modifications in porous silicon by preanodization ion implantation von Pavesi, L., Giebel, G., Ziglio, F., Mariotto, G., Priolo, F., Campisano, S. U., Spinella, C.

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Silicon on an insulator produced by helium implantation and oxidation von Raineri, Vito, Campisano, Salvatore Ugo

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Interstitial trapping efficiency of C + implanted into preamorphised silicon — control of EOR defects von Cristiano, F., Bonafos, C., Nejim, A., Lombardo, S., Omri, M., Alquier, D., Martinez, A., Campisano, S.U., Hemment, P.L.F., Claverie, A.

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Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors von Puglisi, R.A., Lombardo, S.A., Spinella, C., Campisano, S.U., Monchoix, H., Rabinzohn, P.

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A melting model for pulsing-laser annealing of implanted semiconductors von Baeri, P., Campisano, S. U., Foti, G., Rimini, E.

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The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants von Kyllesbech Larsen, K., Privitera, V., Coffa, S., Priolo, F., Spinella, C., Saggio, M., Campisano, S.U.

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Ge ion implantation in Si for the fabrication of Si/GexSi1-x heterojunction transistors von LOMBARDO, S, RAINERI, V, LA VIA, F, IACONA, F, CAMPISANO, S. U, PINTO, A, WARD, P

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Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon von SPINELLA, C, LOMBARDO, S, CAMPISANO, S. U

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