Gettering of metals by voids in silicon von Raineri, V., Fallica, P. G., Percolla, G., Battaglia, A., Barbagallo, M., Campisano, S. U.

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Erbium in oxygen-doped silicon: Optical excitation von van den Hoven, G. N., Shin, Jung H., Polman, A., Lombardo, S., Campisano, S. U.

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Trap-limited migration of Si self-interstitials at room temperature von Kyllesbech Larsen K, Privitera, V, V, Coffa, S, Priolo, F, Campisano, SU, Carnera, A

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Mechanisms of amorphization in crystalline silicon von BATTAGLIA, A, CAMPISANO, S. U

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A melting model for pulsing-laser annealing of implanted semiconductors von Baeri, P., Campisano, S. U., Foti, G., Rimini, E.

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Rapid Solidification in Silicon von Campisano, S.U.

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Secondary defect dissolution by voids in silicon von Raineri, V., Campisano, S. U.

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Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon von LOMBARDO, S, CAMPISANO, S. U, VAN DEN HOVEN, G. N, CACCIATO, A, POLMAN, A

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Gold implantation in n-type silicon : entropy factor and diffusion studies von COFFA, S, CALCAGNO, L, FERLA, G, CAMPISANO, S. U

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Room-temperature recombination of point defects produced in silicon p-n junctions by light ion irradiation von GERMANA, R. S, CAMPISANO, S. U

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Gold diffusion in chemical-vapor-deposited amorphous silicon von CALCAGNO, L, CAMPISANO, S. U, COFFA, S

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Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors von Puglisi, R.A., Lombardo, S.A., Spinella, C., Campisano, S.U., Monchoix, H., Rabinzohn, P.

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Diffusion of ion-implanted gold in p-type silicon von COFFA, S, CALCAGNO, L, CAMPISANO, S. U, CALLERI, G, FERLA, G

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Ge ion implantation in Si for the fabrication of Si/GexSi1-x heterojunction transistors von LOMBARDO, S, RAINERI, V, LA VIA, F, IACONA, F, CAMPISANO, S. U, PINTO, A, WARD, P

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High temperature annealing effects on the electrical characteristics of C implanted Si von Lombardo, S., Cacciato, A., Larsen, K. Kyllesbech, Raineri, V., La Via, F., Privitera, V., Campisano, S. U.

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Early stages of grain growth in ion-irradiated amorphous silicon von SPINELLA, C, LOMBARDO, S, CAMPISANO, S. U

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Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon von SPINELLA, C, LOMBARDO, S, CAMPISANO, S. U

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Grain growth and size distribution in ion-irradiated chemical vapor deposited amorphous silicon von SPINELLA, C, LOMBARDO, S, CAMPISANO, S. U

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Voids in silicon as sink for interstitials von Raineri, V., Campisano, S.U.

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Time resolved temperature measurement of pulsed laser irradiated germanium by thin film thermocouple von BAERI, P, CAMPISANO, S. U, RIMINI, E, JING PING ZHANG

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