Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs von Wadley, P., Novák, V., Campion, R.P., Rinaldi, C., Martí, X., Reichlová, H., Železný, J., Gazquez, J., Roldan, M.A., Varela, M., Khalyavin, D., Langridge, S., Kriegner, D., Máca, F., Mašek, J., Bertacco, R., Holý, V., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Foxon, C.T., Wunderlich, J., Jungwirth, T.

Volltext

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As von Nĕmec, P., Novák, V., Tesařová, N., Rozkotová, E., Reichlová, H., Butkovičová, D., Trojánek, F., Olejník, K., Malý, P., Campion, R.P., Gallagher, B.L., Sinova, Jairo, Jungwirth, T.

Volltext

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy von Foxon, C.T., Novikov, S.V., Hall, J.L., Campion, R.P., Cherns, D., Griffiths, I., Khongphetsak, S.

Volltext

Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells von MARTI, A, TABLERO, C, ANTOLIN, E, LUQUE, A, CAMPION, R. P, NOVIKOV, S. V, FOXON, C. T

Volltext

Extreme voltage recovery in GaAs:Ti intermediate band solar cells von Linares, P.G., Martí, A., Antolín, E., Ramiro, I., López, E., Hernández, E., Fuertes Marrón, D., Artacho, I., Tobías, I., Gérard, P., Chaix, C., Campion, R.P., Foxon, C.T., Stanley, C.R., Molina, S.I., Luque, A.

Volltext

The origin and control of the sources of AMR in (Ga,Mn)As devices von Rushforth, A.W., Výborný, K., King, C.S., Edmonds, K.W., Campion, R.P., Foxon, C.T., Wunderlich, J., Irvine, A.C., Novák, V., Olejník, K., Kovalev, A.A., Sinova, Jairo, Jungwirth, T., Gallagher, B.L.

Volltext

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy von Hall, J.L., Moram, M.A., Sanchez, A., Novikov, S.V., Kent, A.J., Foxon, C.T., Humphreys, C.J., Campion, R.P.

Volltext

The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers von Campion, R.P., Edmonds, K.W., Zhao, L.X., Wang, K.Y., Foxon, C.T., Gallagher, B.L., Staddon, C.R.

Volltext

30μm thick GaAs X-ray p+-i-n+ photodiode grown by MBE von Lioliou, G., Poyser, C.L., Butera, S., Campion, R.P., Kent, A.J., Barnett, A.M.

Volltext

30 μ m  thick GaAs X-ray p + -i-n + photodiode grown by MBE von Lioliou, G., Poyser, C.L., Butera, S., Campion, R.P., Kent, A.J., Barnett, A.M.

Volltext

Additively manufactured ultra-high vacuum chamber for portable quantum technologies von Cooper, N., Coles, L.A., Everton, S., Maskery, I., Campion, R.P., Madkhaly, S., Morley, C., O’Shea, J., Evans, W., Saint, R., Krüger, P., Oručević, F., Tuck, C., Wildman, R.D., Fromhold, T.M., Hackermüller, L.

Volltext

Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning von HATFIELD, S. A, VEAL, T. D, MCCONVILLE, C. F, BELL, G. R, EDMONDS, K. W, CAMPION, R. P, FOXON, C. T, GALLAGHER, B. L

Volltext

Néel vector waves in antiferromagnetic CuMnAs excited by surface acoustic waves von Waqas Khaliq, Muhammad, Amin, O.J, Hernández-Mínguez, A, Rovirola Metcalfe, Marc, Casals, Blai, Omari, K, Ruiz-Gómez, S, Finizio, S, Campion, R.P, Edmonds, K.W, Novák, V, Mandziak, A, Aballe, Lucía, Niño, Miguel Angel, Hernández Ferràs, Joan, Wadley, P, Macià Bros, Ferran, Foerster, Michael

Volltext

Identification of the interstitial Mn site on ferromagnetic (Ga,Mn)As von de Lemos Lima, Tiago, Wahl, Ulrich, Augustyns, Valérie, da Silva, Daniel José, Costa, A, Houben, Kelly, Edmonds, K.W, Gallagher, B.L, Campion, R.P, Van Bael, Margriet, da Silva, M.R, Correia, J.G, Araújo, J.P, Temst, Kristiaan, Vantomme, André, Pereira, Lino

Volltext

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As von Lima, T.A.L, Wahl, U, Costa, A, Augustyns, V, Edmonds, K.W, Gallagher, B.L, Campion, R.P, Araújo, J.P, Correia, J.G, da Silva, M.R, Temst, K, Vantomme, A, Pereira, L.M.C

Volltext

Free-standing zinc-blende (cubic) GaN layers and substrates von Novikov, S.V., Stanton, N.M., Campion, R.P., Foxon, C.T., Kent, A.J.

Volltext

Temperature effects during the growth of In x Ga 1− x N films through the whole compositional range by plasma-assisted molecular beam epitaxy von Hall, J.L., Kent, A.J., Foxon, C.T., Campion, R.P.

Volltext

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content von Novikov, S.V., Staddon, C.R., Akimov, A.V., Campion, R.P., Zainal, N., Kent, A.J., Foxon, C.T., Chen, C.H., Yu, K.M., Walukiewicz, W.

Volltext

Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN von Morales, F.M., Carvalho, D., Ben, T., García, R., Molina, S.I., Martí, A., Luque, A., Staddon, C.R., Campion, R.P., Foxon, C.T.

Volltext

Temperature effects during the growth of InxGa1―xN films through the whole compositional range by plasma-assisted molecular beam epitaxy von HALL, J. L, KENT, A. J, FOXON, C. T, CAMPION, R. P

Volltext