Tunable synchrotron radiation used to induce γ-emission from the 31 year isomer of $\chem{^{178}Hf} von Collins, C. B., Zoita, N. C., Rusu, A. C., Iosif, M. C., Camase, D. T., Davanloo, F., Emura, S., Uruga, T., Dussart, R., Pouvesle, J. M., Ur, C. A., Popescu, I. I., Kirischuk, V. I., Strilchuk, N. V., Agee, F. J.

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Tunable synchrotron radiation used to induce γ-emission from the 31 year isomer of 178Hf von Collins, C. B, Zoita, N. C, Rusu, A. C, Iosif, M. C, Camase, D. T, Davanloo, F, Emura, S, Uruga, T, Dussart, R, Pouvesle, J. M, Ur, C. A, Popescu, I. I, Kirischuk, V. I, Strilchuk, N. V, Agee, F. J

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Tunable synchrotron radiation used to induce γ-emission from the 31 year isomer of 178 Hf von Collins, C. B, Zoita, N. C, Rusu, A. C, Iosif, M. C, Camase, D. T, Davanloo, F, Emura, S, Uruga, T, Dussart, R, Pouvesle, J. M, Ur, C. A, Popescu, I. I, Kirischuk, V. I, Strilchuk, N. V, Agee, F. J

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Development of a diamond treated photoconductive semiconductor switch for use in Blumlein pulsers von Davanloo, F., Iosif, M.C., Camase, D.T., Collins, C.B., Agee, F.J.

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{gamma} emission from the 31-yr isomer of {sup 178}Hf induced by x-ray irradiation von Collins, C. B., Davanloo, F., Rusu, A. C., Iosif, M. C., Zoita, N. C., Camase, D. T., Hicks, J. M., Karamian, S. A., Ur, C. A., Popescu, I. I.

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γ emission from the 31-yr isomer of 178 Hf induced by x-ray irradiation von Collins, C. B., Davanloo, F., Rusu, A. C., Iosif, M. C., Zoita, N. C., Camase, D. T., Hicks, J. M., Karamian, S. A., Ur, C. A., Popescu, I. I., Dussart, R., Pouvesle, J. M., Kirischuk, V. I., Strilchuk, N. V., McDaniel, P., Crist, C. E.

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Development of high power photoconductive semiconductor switches treated with amorphic diamond coatings von Davanloo, F., Iosif, M.C., Camase, D.T., Collins, C.B.

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