Density control of GaN quantum dots on AlN single crystal von Tamariz, Sebastian, Callsen, Gordon, Grandjean, Nicolas

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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap von Nippert, Felix, Karpov, Sergey Yu, Callsen, Gordon, Galler, Bastian, Kure, Thomas, Nenstiel, Christian, Wagner, Markus R., Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel

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Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots von Stachurski, Johann, Tamariz, Sebastian, Callsen, Gordon, Butté, Raphaël, Grandjean, Nicolas

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Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations von Butté, Raphaël, Lahourcade, Lise, Uždavinys, Tomas Kristijonas, Callsen, Gordon, Mensi, Mounir, Glauser, Marlene, Rossbach, Georg, Martin, Denis, Carlin, Jean-François, Marcinkevičius, Saulius, Grandjean, Nicolas

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Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon von Tamariz, Sebastian, Callsen, Gordon, Stachurski, Johann, Shojiki, Kanako, Butté, Raphaël, Grandjean, Nicolas

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A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities von Jagsch, Stefan T., Triviño, Noelia Vico, Lohof, Frederik, Callsen, Gordon, Kalinowski, Stefan, Rousseau, Ian M., Barzel, Roy, Carlin, Jean-François, Jahnke, Frank, Butté, Raphaël, Gies, Christopher, Hoffmann, Axel, Grandjean, Nicolas, Reitzenstein, Stephan

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Optical absorption and oxygen passivation of surface states in III-nitride photonic devices von Rousseau, Ian, Callsen, Gordon, Jacopin, Gwénolé, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas

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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet von Schmidt, Gordon, Berger, Christoph, Veit, Peter, Metzner, Sebastian, Bertram, Frank, Bläsing, Jürgen, Dadgar, Armin, Strittmatter, André, Christen, Jürgen, Callsen, Gordon, Kalinowski, Stefan, Hoffmann, Axel

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Manifestation of unconventional biexciton states in quantum dots von Hönig, Gerald, Callsen, Gordon, Schliwa, Andrei, Kalinowski, Stefan, Kindel, Christian, Kako, Satoshi, Arakawa, Yasuhiko, Bimberg, Dieter, Hoffmann, Axel

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Effects of strain on the valence band structure and exciton-polariton energies in ZnO von Wagner, Markus R., Callsen, Gordon, Reparaz, Juan S., Kirste, Ronny, Hoffmann, Axel, Rodina, Anna V., Schleife, André, Bechstedt, Friedhelm, Phillips, Matthew R.

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Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements von Kirste, Ronny, Hoffmann, Marc P., Tweedie, James, Bryan, Zachary, Callsen, Gordon, Kure, Thomas, Nenstiel, Christian, Wagner, Markus R., Collazo, Ramón, Hoffmann, Axel, Sitar, Zlatko

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Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells von Nippert, Felix, Nirschl, Anna, Schulz, Tobias, Callsen, Gordon, Pietzonka, Ines, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Strassburg, Martin, Albrecht, Martin, Hoffmann, Axel

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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence von Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel

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Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy von Freytag, Stefan, Feneberg, Martin, Berger, Christoph, Bläsing, Jürgen, Dadgar, Armin, Callsen, Gordon, Nippert, Felix, Hoffmann, Axel, Bokov, Pavel Yu, Goldhahn, Rüdiger

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Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots von Hönig, Gerald, Rodt, Sven, Callsen, Gordon, Ostapenko, Irina A., Kure, Thomas, Schliwa, Andrei, Kindel, Christian, Bimberg, Dieter, Hoffmann, Axel, Kako, Satoshi, Arakawa, Yasuhiko

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Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy von Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

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Near-UV narrow bandwidth optical gain in lattice-matched III-nitride waveguides von Ciers, Joachim, Jacopin, Gwénolé, Callsen, Gordon, Bougerol, Catherine, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas

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Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells von Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

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Free‐Standing ZnSe‐Based Microdisk Resonators: Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry von Seemann, Wilken, Kothe, Alexander, Tessarek, Christian, Schmidt, Gesa, Qiao, Siqi, von den Driesch, Nils, Wiersig, Jan, Pawlis, Alexander, Callsen, Gordon, Gutowski, Jürgen

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Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al 0.64 Ga 0.36 N Double Quantum Wells von Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

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