Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices von Momand, Jamo, Wang, Ruining, Boschker, Jos E, Verheijen, Marcel A, Calarco, Raffaella, Kooi, Bart J

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InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001) von Ernst, Torsten, Chèze, Caroline, Calarco, Raffaella

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Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices von Momand, Jamo, Wang, Ruining, Boschker, Jos E, Verheijen, Marcel A, Calarco, Raffaella, Kooi, Bart J

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Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111) von Liebmann, Marcus, Rinaldi, Christian, Di Sante, Domenico, Kellner, Jens, Pauly, Christian, Wang, Rui Ning, Boschker, Jos Emiel, Giussani, Alessandro, Bertoli, Stefano, Cantoni, Matteo, Baldrati, Lorenzo, Asa, Marco, Vobornik, Ivana, Panaccione, Giancarlo, Marchenko, Dmitry, Sánchez-Barriga, Jaime, Rader, Oliver, Calarco, Raffaella, Picozzi, Silvia, Bertacco, Riccardo, Morgenstern, Markus

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Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices von Wang, Ruining, Bragaglia, Valeria, Boschker, Jos E, Calarco, Raffaella

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Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering von Bragaglia, Valeria, Arciprete, Fabrizio, Mio, Antonio M., Calarco, Raffaella

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Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials von Bragaglia, Valeria, Arciprete, Fabrizio, Zhang, Wei, Mio, Antonio Massimiliano, Zallo, Eugenio, Perumal, Karthick, Giussani, Alessandro, Cecchi, Stefano, Boschker, Jos Emiel, Riechert, Henning, Privitera, Stefania, Rimini, Emanuele, Mazzarello, Riccardo, Calarco, Raffaella

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Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity von Fernández-Garrido, Sergio, Kong, Xiang, Gotschke, Tobias, Calarco, Raffaella, Geelhaar, Lutz, Trampert, Achim, Brandt, Oliver

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Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys von Cecchi, Stefano, Dragoni, Daniele, Kriegner, Dominik, Tisbi, Elisa, Zallo, Eugenio, Arciprete, Fabrizio, Holý, Václav, Bernasconi, Marco, Calarco, Raffaella

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Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory von Boniardi, Mattia, Boschker, Jos E., Momand, Jamo, Kooi, Bart J., Redaelli, Andrea, Calarco, Raffaella

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Laser induced structural transformation in chalcogenide based superlattices von Zallo, Eugenio, Wang, Ruining, Bragaglia, Valeria, Calarco, Raffaella

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Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride von Varotto, Sara, Nessi, Luca, Cecchi, Stefano, Sławińska, Jagoda, Noël, Paul, Petrò, Simone, Fagiani, Federico, Novati, Alessandro, Cantoni, Matteo, Petti, Daniela, Albisetti, Edoardo, Costa, Marcio, Calarco, Raffaella, Buongiorno Nardelli, Marco, Bibes, Manuel, Picozzi, Silvia, Attané, Jean-Philippe, Vila, Laurent, Bertacco, Riccardo, Rinaldi, Christian

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Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices von Momand, Jamo, Lange, Felix R.L., Wang, Ruining, Boschker, Jos E., Verheijen, Marcel A., Calarco, Raffaella, Wuttig, Matthias, Kooi, Bart J.

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Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation von Bertelli, Marco, Sfuncia, Gianfranco, De Simone, Sara, Diaz Fattorini, Adriano, Calvi, Sabrina, Mussi, Valentina, Arciprete, Fabrizio, Mio, Antonio M., Calarco, Raffaella, Longo, Massimo

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Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices von Chèze, Caroline, Siekacz, Marcin, Isa, Fabio, Jenichen, Bernd, Feix, Felix, Buller, Jakov, Schulz, Tobias, Albrecht, Martin, Skierbiszewski, Czeslaw, Calarco, Raffaella, Riechert, Henning

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Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy von Calarco, Raffaella, Meijers, Ralph J, Debnath, Ratan K, Stoica, Toma, Sutter, Eli, Lüth, Hans

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Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate von Boschker, Jos E, Momand, Jamo, Bragaglia, Valeria, Wang, Ruining, Perumal, Karthick, Giussani, Alessandro, Kooi, Bart J, Riechert, Henning, Calarco, Raffaella

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Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface von Wang, Ruining, Boschker, Jos E, Bruyer, Emilie, Sante, Domenico Di, Picozzi, Silvia, Perumal, Karthick, Giussani, Alessandro, Riechert, Henning, Calarco, Raffaella

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Evidence for topological band inversion of the phase change material Ge2Sb2Te5 von Pauly, Christian, Liebmann, Marcus, Giussani, Alessandro, Kellner, Jens, Just, Sven, Sánchez-Barriga, Jaime, Rienks, Emile, Rader, Oliver, Calarco, Raffaella, Bihlmayer, Gustav, Morgenstern, Markus

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Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy von Boschker, Jos E., Boniardi, Mattia, Redaelli, Andrea, Riechert, Henning, Calarco, Raffaella

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