A remarkable performance of CH3NH3PbI3 perovskite memory based on passivated method von Cai, Hengmei, Ma, Guokun, He, Yuli, Liu, Chunlei, Wang, Hao

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Impact of chemical doping on resistive switching behavior in zirconium-doped CH3NH3PbI3 based RRAM von He, Yuli, Ma, Guokun, Zhou, Xiaowen, Cai, Hengmei, Liu, Chunlei, Zhang, Jun, Wang, Hao

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Compact pure phase CsPbBr3 perovskite film with significantly improved stability for high-performance memory von Cai, Hengmei, Ma, Guokun, He, Yuli, Lu, Li, Zhang, Jun, Wang, Hao

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High performance and mechanism of the resistive switching device based on lead halide thin films von He, Yuli, Ma, Guokun, Cai, Hengmei, Liu, Chunlei, Zhang, Huaiwu, Wang, Hao

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A remarkable performance of CH 3 NH 3 PbI 3 perovskite memory based on passivated method von Cai, Hengmei, Ma, Guokun, He, Yuli, Liu, Chunlei, Wang, Hao

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Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices von He, Yuli, Ma, Guokun, Cai, Hengmei, Liu, Chunlei, Chen, Ao, Chen, Qin, Wang, Hao, Chang, Ting-Chang

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Transparent flexible resistive random access memory based on two-dimensional Ti3C2-MXene thin film material and preparation method of transparent flexible resistive random access m... von ZHAO QINGYAO, CAI HENGMEI, MA GUOKUN, WANG HAO

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Gating device based on Ti3C2-MXene film functional layer and preparation method thereof von ZHAO QINGYAO, CAI HENGMEI, MA GUOKUN, WANG HAO

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2D Ti3C2-MXene thin film material, preparation method thereof and application of material in resistive random access memory (RRAM) von ZHAO QINGYAO, CAI HENGMEI, MA GUOKUN, WANG HAO

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Environment-friendly Bi-based perovskite resistive memory and preparation method thereof von ZHAO QINGYAO, CAI HENGMEI, MA GUOKUN, WANG HAO

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Resistive random access memory based on perovskite materials and preparation method thereof von HE YULI, CAI HENGMEI, MA GUOKUN, WANG HAO, ZHOU XIAOWEN

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Perovskite resistive random-access memory based on Zr element doping and preparation method thereof von HE YULI, CAI HENGMEI, MA GUOKUN, WANG HAO, ZHOU XIAOWEN

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A full inorganic perovskite resistive random access memory and a method for preparing the same von CAI HENGMEI, MA GUOKUN, SONG ZEHAO, ZHOU HAI, WANG HAO

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Resistive random access memory of oleic acid passivation organic/inorganic hybrid perovskite, and preparation method thereof von HE YULI, CAI HENGMEI, MA GUOKUN, WANG HAO

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Resistance random access memory based on lead halide von HE YULI, CAI HENGMEI, MA GUOKUN, WANG HAO

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Resistive random access memory based on stannous halide von HE YULI, LIU CHUNLEI, CAI HENGMEI, MA GUOKUN, WANG HAO, CHEN AO

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The crystal structure of 5,6-dichloro-2-(quinolin-8-yl)isoindoline-1,3-dione, C17H8Cl2N2O2 von Chen, Jie, Zhu, Hengmei, Cai, Zhigang, Hu, Jing, Shen, Lili, Zhang, Yali, Xu, Xiaoping

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Clinical course and risk factors for recurrence of positive SARS-CoV-2 RNA: a retrospective cohort study from Wuhan, China von Chen, Jie, Xu, Xiaoping, Hu, Jing, Chen, Qiangda, Xu, Fengfeng, Liang, Hui, Liu, Nanmei, Zhu, Hengmei, Lan, Jinlong, Zhou, Lan, Xing, Jiajun, Pu, Ning, Cai, Zhigang

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Chromosomal-Level Genome Assembly of a True Bug, Aspongopus chinensis Dallas, 1851 (Hemiptera: Dinidoridae) von Jiang, Tao, Yin, Zhiyong, Cai, Renlian, Yu, Hengmei, Lu, Qin, Zhao, Shuai, Tian, Ying, Yan, Yufang, Guo, Jianjun, Chen, Xiangsheng

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The crystal structure of 5,6-dichloro-2-(quinolin-8-yl)isoindoline-1,3-dione, C 17 H 8 Cl 2 N 2 O 2 von Chen, Jie, Zhu, Hengmei, Cai, Zhigang, Hu, Jing, Shen, Lili, Zhang, Yali, Xu, Xiaoping

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