Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy von Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S, Kölker, Alexander, McKenzie, David R, Schofield, Steven R, Curson, Neil J

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EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning von Constantinou, Procopios, Stock, Taylor J. Z., Tseng, Li-Ting, Kazazis, Dimitrios, Muntwiler, Matthias, Vaz, Carlos A. F., Ekinci, Yasin, Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.

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Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon von Constantinou, Procopios, Stock, Taylor J Z, Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J, Strocov, Vladimir N, Aeppli, Gabriel, Curson, Neil J, Schofield, Steven R

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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon von D'Anna, Nicolò, Ferreira Sanchez, Dario, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J.Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel

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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface von Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO 2 interface von Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy von Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G

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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy von Studer, Philipp, Schofield, Steven R., Hirjibehedin, Cyrus F., Curson, Neil J.

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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication von Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J.

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In operando charge transport imaging of atomically thin dopant nanostructures in silicon von Kölker, Alexander, Gramse, Georg, Stock, Taylor J Z, Aeppli, Gabriel, Curson, Neil J

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface von Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R.

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Substitutional Tin Acceptor States in Black Phosphorus von Wentink, Mark, Gaberle, Julian, Aghajanian, Martik, Mostofi, Arash A, Curson, Neil J, Lischner, Johannes, Schofield, Steven R, Shluger, Alexander L, Kenyon, Anthony J

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Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001) von Lundgren, Eric A. S., Byron, Carly, Constantinou, Procopios, Stock, Taylor J. Z., Curson, Neil J., Thomsen, Lars, Warschkow, Oliver, Teplyakov, Andrew V., Schofield, Steven R.

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Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices von Le, Nguyen H., Fisher, Andrew J., Curson, Neil J., Ginossar, Eran

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Nondestructive imaging of atomically thin nanostructures buried in silicon von Gramse, Georg, Kölker, Alexander, Lim, Tingbin, Stock, Taylor J Z, Solanki, Hari, Schofield, Steven R, Brinciotti, Enrico, Aeppli, Gabriel, Kienberger, Ferry, Curson, Neil J

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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy von Sinthiptharakoon, Kitiphat, Schofield, Steven R, Studer, Philipp, Brázdová, Veronika, Hirjibehedin, Cyrus F, Bowler, David R, Curson, Neil J

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Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms von Masteghin, Mateus G., Gervais, Toussaint, Clowes, Steven K., Cox, David C., Zelyk, Veronika, Pattammattel, Ajith, Chu, Yong S., Kolev, Nikola, Stock, Taylor J. Z., Curson, Neil J., Evans, Paul G., Stuckelberger, Michael, Murdin, Benedict N.

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Resistless EUV lithography: Photon-induced oxide patterning on silicon von Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C, Stock, Taylor J Z, Curson, Neil J, Schofield, Steven R, Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin

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Channels of oxygen diffusion in single crystal rubrene revealed von Thompson, Robert J, Bennett, Thomas, Fearn, Sarah, Kamaludin, Muhammad, Kloc, Christian, McPhail, David S, Mitrofanov, Oleg, Curson, Neil J

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface von Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R.

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