Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates von Currie, M. T., Leitz, C. W., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Antoniadis, D. A.

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors von Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.

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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing von Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., Fitzgerald, E. A.

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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates von Lee, Minjoo L., Leitz, C. W., Cheng, Z., Pitera, A. J., Langdo, T., Currie, M. T., Taraschi, G., Fitzgerald, E. A., Antoniadis, Dimitri A.

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Film thickness constraints for manufacturable strained silicon CMOS von Fiorenza, J G, Braithwaite, G, Leitz, C W, Currie, M T, Yap, J, Singaporewala, F, Yang, V K, Langdo, T A, Carlin, J, Somerville, M, Lochtefeld, A, Badawi, H, Bulsara, M T

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Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates von Yang, V. K., Groenert, M., Leitz, C. W., Pitera, A. J., Currie, M. T., Fitzgerald, E. A.

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SPITZER EVIDENCE FOR A LATE-HEAVY BOMBARDMENT AND THE FORMATION OF UREILITES IN η CORVI At ∼1 Gyr von LISSE, C. M, WYATT, M. C, CHEN, C. H, MORLOK, A, WATSON, D. M, MANOJ, P, SHEEHAN, P, CURRIE, T. M, THEBAULT, P, SITKO, M. L

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High quality Ge on Si by epitaxial necking von Langdo, T. A., Leitz, C. W., Currie, M. T., Fitzgerald, E. A., Lochtefeld, A., Antoniadis, D. A.

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High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers von Samavedam, S. B., Currie, M. T., Langdo, T. A., Fitzgerald, E. A.

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SiGe-free strained Si on insulator by wafer bonding and layer transfer von Langdo, T. A., Currie, M. T., Lochtefeld, A., Hammond, R., Carlin, J. A., Erdtmann, M., Braithwaite, G., Yang, V. K., Vineis, C. J., Badawi, H., Bulsara, M. T.

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Hole mobility enhancements in strained Si/Si1−yGey  p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates von Leitz, C. W., Currie, M. T., Lee, M. L., Cheng, Z.-Y., Antoniadis, D. A., Fitzgerald, E. A.

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Dislocation glide and blocking kinetics in compositionally graded SiGe/Si von Leitz, C. W., Currie, M. T., Kim, A. Y., Lai, J., Robbins, E., Fitzgerald, E. A., Bulsara, M. T.

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth von Morris, R J H, Grasby, T J, Hammond, R, Myronov, M, Mironov, O A, Leadley, D R, Whall, T E, Parker, E H C, Currie, M T, Leitz, C W, Fitzgerald, E A

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Dislocation dynamics in relaxed graded composition semiconductors von Fitzgerald, E.A, Kim, A.Y, Currie, M.T, Langdo, T.A, Taraschi, G, Bulsara, M.T

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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient von Bera, L.K., Mathew, Shajan, Balasubramanian, N., Braithwaite, G., Currie, M.T., Singaporewala, F., Yap, J., Hammond, R., Lochtefeld, A., Bulsara, M.T., Fitzgerald, E.A.

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High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates von Sieg, R. M., Carlin, J. A., Boeckl, J. J., Ringel, S. A., Currie, M. T., Ting, S. M., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Keyes, B. M.

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Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates von YANG, V. K, GROENERT, M. E, TARASCHI, G, LEITZ, C. W, PITERA, A. J, CURRIE, M. T, CHENG, Z, FITZGERALD, E. A

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Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate von Yang, V. K., Ting, S. M., Groenert, M. E., Bulsara, M. T., Currie, M. T., Leitz, C. W., Fitzgerald, E. A.

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SPITZER EVIDENCE FOR A LATE-HEAVY BOMBARDMENT AND THE FORMATION OF UREILITES IN [eta] CORVI At ~1 Gyr von Lisse, C M, Wyatt, M C, Chen, C H, Morlok, A, Watson, D M, Manoj, P, Sheehan, P, Currie, T M, Thebault, P, Sitko, M L

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Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates von Andre, C. L., Boeckl, J. J., Leitz, C. W., Currie, M. T., Langdo, T. A., Fitzgerald, E. A., Ringel, S. A.

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