The spatial variation of the quasi-Fermi potentials in reverse-biased p+-n junctions and its implications in transition region capacitance calculations von Cserveny, S.I., Bulucea, C.D.

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Potential distribution and capacitance of abrupt heterojunctions von CSERVENY, S. I.

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Absence of synergistic effects in quasi-simultaneous sputtering of tungsten by Ar and D ions von Cupak, C., Brandstätter, F., Cserveny, R., Troneberger, F., Biber, H., Fellinger, M., Redl, A., Moro, M.V., Böhm, D., Eisenmenger-Sittner, Ch, Mutzke, A., Primetzhofer, D., Aumayr, F.

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Sputtering Behavior of Rough, Polycrystalline Mercury Analogs von Biber, H., Brötzner, J., Jäggi, N., Szabo, P. S., Pichler, J., Cupak, C., Voith, C., Cserveny, B., Nenning, A., Mutzke, A., Moro, M. V., Primetzhofer, D., Mezger, K., Galli, A., Wurz, P., Aumayr, F.

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Locally switched and limited source-body bias and other leakage reduction techniques for a low-power embedded SRAM von Cserveny, S., Sumanen, L., Masgonty, J.-M., Piguet, C.

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Low-Power Adaptive Bias Amplifier for a Large Supply-Range Linear Voltage Regulator von Cserveny, Stefan

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Airline Application Security in the Digital Economy: Tackling Security Challenges for Distributed Applications in Lufthansa Systems von Somoskői, Balázs, Spahr, Stefan, Rios, Erkuden, Ripolles, Oscar, Dominiak, Jacek, Cserveny, Tamás, Bálint, Péter, Matthews, Peter, Iturbe, Eider, Muntés-Mulero, Victor

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IDAC: an interactive design tool for analog CMOS circuits von Degrauwe, M.G.R., Nys, O., Dijkstra, E., Rijmenants, J., Bitz, S., Goffart, B.L.A.G., Vittoz, E.A., Cserveny, S., Meixenberger, C., van der Stappen, G., Oguey, H.J.

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Absence of synergistic effects in quasi-simultaneous sputtering of tungsten by Ar and D ions von Cupak, C, Brandstätter, F, Cserveny, R, Troneberger, F, Biber, H, Fellinger, M, Redl, A, Moro, Marcos V, Böhm, D, Eisenmenger-Sittner, Ch, Mutzke, A, Primetzhofer, Daniel, Aumayr, F

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Relationship between measured and intrinsic conductances of MOSFETs von Cserveny, S.

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MOS small-signal conductances in the weak avalanche multiplication region von Cserveny, S.

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Sputtering Behavior of Rough, Polycrystalline Mercury Analogs von Biber, H, Broetzner, J, Jaeggi, N, Szabo, P. S, Pichler, J, Cupak, C, Voith, C, Cserveny, B, Nenning, A, Mutzke, A, Moro, Marcos V, Primetzhofer, Daniel, Mezger, K, Galli, A, Wurz, P, Aumayr, F

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Noise Margin in Low Power SRAM Cells von Cserveny, S., Masgonty, J. -M., Piguet, C.

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Stand-by Power Reduction for Storage Circuits von Cserveny, S., Masgonty, J. -M., Piguet, C.

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Power Management for Low-Power Battery Operated Portable Systems Using Current-Mode Techniques von Perotto, Jean-Félix, Cserveny, Stefan

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The Ultra Low-PowerWiseNET System von El-Hoiydi, A., Arm, C., Caseiro, R., Cserveny, S., Decotignie, J.-D., Enz, C., Giroud, F., Gyger, S., Leroux, E., Melly, T., Peiris, V., Pengg, F., Pfister, P.-D., Raemy, N., Ribordy, A., Ruffieux, D., Volet, P.

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Closed Form Expression MOS Transistor Model for Analog Circuit Simulation von Cserveny, S.

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Equipment for combating damage from liquid von CSERVENY, FERENC

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A 1 V 433/868 MHz 25 kb/s-FSK 2 kb/s-OOK RF transceiver SoC in standard digital 0.18 /spl mu/m CMOS von Peiris, V., Arm, C., Bories, S., Cserveny, S., Giroud, F., Graber, P., Gyger, S., Le Roux, E., Melly, T., Moser, M., Nys, O., Pengg, F., Pfister, P.-D., Raemy, N., Ribordy, A., Ruedi, P.-F., Ruffieux, D., Sumanen, L., Todeschin, S., Volet, P.

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MOS technology fabricated digital integrated circuit von MASGONTY, JEAN-MARC, CSERVENY, STEFAN

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