Measurement of valley splitting in high-symmetry Si/SiGe quantum dots von Borselli, M. G., Ross, R. S., Kiselev, A. A., Croke, E. T., Holabird, K. S., Deelman, P. W., Warren, L. D., Alvarado-Rodriguez, I., Milosavljevic, I., Ku, F. C., Wong, W. S., Schmitz, A. E., Sokolich, M., Gyure, M. F., Hunter, A. T.

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Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots von Borselli, M. G., Eng, K., Croke, E. T., Maune, B. M., Huang, B., Ross, R. S., Kiselev, A. A., Deelman, P. W., Alvarado-Rodriguez, I., Schmitz, A. E., Sokolich, M., Holabird, K. S., Hazard, T. M., Gyure, M. F., Hunter, A. T.

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High-gain multi-finger power n-MODFET on Si substrate von YUAN, H.-C, JIANG, N, MA, Z, CROKE, E. T

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Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells von Kuznetsov, VV, Mendez, EE, Zuo, X, Snider, GL, Croke, ET

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Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel von Sakr, M. R., Jiang, H. W., Yablonovitch, E., Croke, E. T.

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Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures von Scott, G. D., Xiao, M., Jiang, H. W., Croke, E. T., Yablonovitch, E.

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Temperature dependence of Sb-heterostructure millimetre-wave diodes von Schulman, J.N., Holabird, K.S., Chow, D.H., Dunlap, H.L., Thomas, S., Croke, E.T.

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Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers von Rieh, J.-S., Klotzkin, D., Qasaimeh, O., Lu, L.-H., Yang, K., Katehi, L.P.B., Bhattacharya, P., Croke, E.T.

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Measurement of the valence-band offset in strained Si/Ge (100) heterojunctions by x-ray photoelectron spectroscopy von YU, E. T, CROKE, E. T, MCGILL, T. C, MILES, R. H

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Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays von Qasaimeh, O., Zhenqiang Ma, Bhattacharya, P., Croke, E.T.

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Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy von CROKE, E. T, MCGILL, T. C, HAUENSTEIN, R. J, MILES, R. H

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High electron mobility in SiGe/Si n -MODFET structures on sapphire substrates von Mueller, C.H., Croke, E.T., Alterovitz, S.A.

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Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures von Heyd, A.R., Alterovitz, S.A., Croke, E.T., Wang, K.L., Lee, C.H.

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SiGe-Si quantum-well electroabsorption modulators von Qasaimeh, O., Bhattacharya, P.

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Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices von SIEG, R. M, ALTEROVITZ, S. A, CROKE, E. T, HARRELL, M. J

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High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation von Alterovitz, S. A., Mueller, C. H., Croke, E. T.

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Growth of superconducting V3Si on Si by molecular beam epitaxial techniques von CROKE, E. T, HAUENSTEIN, R. J, MCGILL, T. C

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Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry von SIEG, R. M, ALTEROVITZ, S. A, CROKE, E. T, HARRELL, M. J, TANNER, M, WANG, K. L, MENA, R. A, YOUNG, P. G

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Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy von Stein, B. L., Yu, E. T., Croke, E. T., Hunter, A. T., Laursen, T., Bair, A. E., Mayer, J. W., Ahn, C. C.

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Reliability of microwave SiGe/Si heterojunction bipolar transistors von Zhenqiang Ma, Bhattacharya, P., Jae-Sung Rieh, Ponchak, G.E., Alterovitz, S.A., Croke, E.T.

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