The concept of electrostatic doping and related devices von Cristoloveanu, Sorin, Lee, Kyung Hwa, Park, Hyungjin, Parihar, Mukta Singh

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A Review of Sharp-Switching Devices for Ultra-Low Power Applications von Cristoloveanu, Sorin, Jing Wan, Zaslavsky, Alexander

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Frontiers of silicon-on-insulator von Celler, G. K., Cristoloveanu, Sorin

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A review of electrical characterization techniques for ultrathin FDSOI materials and devices von Cristoloveanu, Sorin, Bawedin, Maryline, Ionica, Irina

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A reconfigurable silicon-on-insulator diode with tunable electrostatic doping von Cristoloveanu, Sorin, Lee, Kyung Hwa, Bawedin, Maryline

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Special size effects in advanced single-gate and multiple-gate SOI transistors von Ohata, Akiko, Ritzenthaler, Romain, Faynot, Olivier, Cristoloveanu, Sorin

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A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation von Bawedin, M., Cristoloveanu, S., Flandre, D.

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Nanodevices Tend to Be Round von Pananakakis, Georges, Ghibaudo, Gérard, Cristoloveanu, Sorin

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Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach von Im, Ki-Sik, Won, Chul-Ho, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Kim, Yong-Tae, Lee, Jung-Hee

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation von Son, Dong-Hyeok, Thingujam, Terirama, Kim, Jeong-Gil, Kim, Dae-Hyun, Kang, In Man, Im, Ki-Sik, Theodorou, Christoforos, Ghibaudo, Gerard, Cristoloveanu, Sorin, Lee, Jung-Hee

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Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure von Siva Pratap Reddy, Mallem, Im, Ki-Sik, Lee, Jung-Hee, Caulmione, Raphael, Cristoloveanu, Sorin

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Intrinsic Mechanism of Mobility Collapse in Short MOSFETs von Cristoloveanu, Sorin, Ghibaudo, Gerard

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Depletion-All-Around Operation of the SOI Four-Gate Transistor von Akarvardar, K., Cristoloveanu, S., Gentil, P., Schrimpf, R.D., Blalock, B.J.

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Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs von Navarro, Carlos, Bawedin, Maryline, Andrieu, Francois, Cristoloveanu, Sorin

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Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors von Mallem, Siva Pratap Reddy, Im, Ki-Sik, Thingujam, Terirama, Lee, Jung-Hee, Caulmilone, Raphael, Cristoloveanu, Sorin

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Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) von Deng, Jianan, Shao, Jinhai, Lu, Bingrui, Chen, Yifang, Zaslavsky, Alexander, Cristoloveanu, Sorin, Bawedin, Maryline, Wan, Jing

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Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology von Athanasiou, Sotirios, Legrand, Charles-Alexandre, Cristoloveanu, Sorin, Galy, Philippe

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Sharp-switching band-modulation back-gated devices in advanced FDSOI technology von El Dirani, Hassan, Fonteneau, Pascal, Solaro, Yohann, Legrand, Charles-Alex, Marin-Cudraz, David, Ferrari, Philippe, Cristoloveanu, Sorin

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Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET von Vodapally, Sindhuri, Theodorou, Christoforos G., Youngho Bae, Ghibaudo, Gerard, Cristoloveanu, Sorin, Ki-Sik Im, Jung-Hee Lee

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