Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers von Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J.

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Toward Smart and Ultra‐efficient Solid‐State Lighting von Tsao, Jeffrey Y., Crawford, Mary H., Coltrin, Michael E., Fischer, Arthur J., Koleske, Daniel D., Subramania, Ganapathi S., Wang, G. T., Wierer, Jonathan J., Karlicek, Robert F.

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Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays von Li, Qiming, Westlake, Karl R, Crawford, Mary H, Lee, Stephen R, Koleske, Daniel D, Figiel, Jeffery J, Cross, Karen C, Fathololoumi, Saeed, Mi, Zetian, Wang, George T

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Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective von Tsao, Jeffrey Y., Coltrin, Michael E., Crawford, Mary H., Simmons, Jerry A.

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Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion von Achermann, Marc, Petruska, Melissa A, Koleske, Daniel D, Crawford, Mary H, Klimov, Victor I

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N von Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J.

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes von Armstrong, Andrew M., Crawford, Mary H., Jayawardena, Asanka, Ahyi, Ayayi, Dhar, Sarit

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Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage von Armstrong, Andrew M., Allerman, Andrew A., Pickrell, Greg W., Crawford, Mary H., Glaser, Caleb E., Smith, Trevor

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Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve von Lin, Guan-Bo, Shan, Qifeng, Birkel, Andrew J, Cho, Jaehee, Fred Schubert, E, Crawford, Mary H, Westlake, Karl R, Koleske, Daniel D

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Defect-enabled electrical current leakage in ultraviolet light-emitting diodes von Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer Jr, Jonathan J., Smith, Michael L., Biedermann, Laura B.

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First principles study of hBN-AlN short-period superlattice heterostructures von Spataru, Catalin D., Crawford, Mary H., Allerman, Andrew A.

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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes von Zhu, Di, Xu, Jiuru, Noemaun, Ahmed N., Kim, Jong Kyu, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D.

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes von Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, Park, Yongjo

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All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions von Hasan, Syed M N, Gunning, Brendan P, J.-Eddine, Zane, Chandrasekar, Hareesh, Crawford, Mary H, Armstrong, Andrew, Rajan, Siddharth, Arafin, Shamsul

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Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes von Schubert, Martin F., Chhajed, Sameer, Kim, Jong Kyu, Schubert, E. Fred, Koleske, Daniel D., Crawford, Mary H., Lee, Stephen R., Fischer, Arthur J., Thaler, Gerald, Banas, Michael A.

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Simulations of Junction Termination Extensions in Vertical GaN Power Diodes von Wierer, Jonathan J., Dickerson, Jeramy R., Allerman, Andrew A., Armstrong, Andrew M., Crawford, Mary H., Kaplar, Robert J.

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Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes von Deitz, Julia I., Sugar, Joshua D., Kiefer, Boris, Baldonado, Nicholas S., Allerman, Andrew A., Crawford, Mary H.

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Genetic Algorithm for Innovative Device Designs in High-Efficiency III--V Nitride Light-Emitting Diodes von Zhu, Di, Schubert, Martin F, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H, Koleske, Daniel D, Shim, Hyunwook, Sone, Cheolsoo

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Ultrafast and band-selective Auger recombination in InGaN quantum wells von Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., Zhu, X.-Y.

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms von Dai, Qi, Shan, Qifeng, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, Park, Yongjo

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