Infrared intersubband absorption in GaAs/AlAs multiple quantum wells von COVINGTON, B. C, LEE, C. C, HU, B. H, TAYLOR, H. F, STREIT, D. C

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Anomalous temperature behavior of Raman spectra from visible light emitting porous silicon von Feng, Z.C., Payne, J.R., Covington, B.C.

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Athermal annealing of low-energy boron implants in silicon von Donnelly, D. W., Covington, B. C., Grun, J., Fischer, R. P., Peckerar, M., Felix, C. L.

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Potential for Segregating Milk: Herd Differences in Milk Value for Fluid and Five Manufactured Products von Norman, H.D., Wright, J.R., Covington, C.B., Barton, E.P., Ernstrom, C.A.

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Athermal annealing of phosphorus-ion-implanted silicon von Grun, J., Fischer, R. P., Peckerar, M., Felix, C. L., Covington, B. C., DeSisto, W. J., Donnelly, D. W., Ting, A., Manka, C. K.

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MBE growth and characterization of InxGa1-xSb/InAs strained layer superlattices von FASHE, R, ZBOROWSKI, J. T, GOLDING, T. D, SHIH, H. D, CHOW, P. C, MATSUICHI, K, COVINGTON, B. C, CHI, A, ZHENG, J, SCHAAKE, H. F

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Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon von Donnelly, D. W., Covington, B. C., Grun, J., Hoffman, C. A., Meyer, J. R., Manka, C. K., Glembocki, O., Qadri, S. B., Skelton, E. F.

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Neutron irradiation effects on the infrared absorption of the EL2 defect in GaAs: new interpretation for the intracenter transition von MANASREH, M. O, FISCHER, D. W, COVINGTON, B. C

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Fourier-transform infrared-absorption studies of intracenter transitions in the EL2 level in semi-insulating bulk GaAs grown with the liquid-encapsulated Czochralski technique von MANASREH, M. O, COVINGTON, B. C

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Infrared-absorption properties of EL2 in GaAs von MANASREH, M. O, COVINGTON, B. C

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Observation of additional excited-state lines of indium in silicon von Covington, B. C., Harris, Richard J., Spry, Robert J.

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Infrared absorption properties of KTN single crystals von Covington, B. C., Zou, Zhongji, Pandey, R. K., Goeking, K. W.

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Electron paramagnetic resonance of isolated ASGa+ antisite defect in neutron-transmutation doped semi-insulating GaAs von Manasreh, M.O., McDonald, P.F., Kivlighn, S.A., Minton, J.T., Covington, B.C.

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New evidence of small lattice relaxation for the D X center in Al x Ga1− x As von Talwar, D. N., Manasreh, M. O., Suh, K. S., Covington, B. C.

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New evidence of small lattice relaxation for the DX center in AlxGa1-xAs von TALWAR, D. N, MANASREH, M. O, SUH, K. S, COVINGTON, B. C

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Electron paramagnetic resonance of isolated AsGa+ antisite defect in neutron-transmutation doped semi-unsulating GaAs von MAMASREH, M. O, MCDONALD, P. F, KIVLIGHN, S. A, MINTON, J. T, COVINGTON, B. C

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Infrared-absorption properties of EL 2 in GaAs von Manasreh, M. O., Covington, B. C.

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Topics in crystal acceleration von Newberger, B., Tajima, T., Huson, F. R., Covington, B. C.

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Neutron irradiation effects on the infrared absorption of the EL 2 defect in GaAs: New interpretation for the intracenter transition von Manasreh, M. O., Fischer, D. W., Covington, B. C.

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Electron paramagnetic resonance of isolated AS Ga+ antisite defect in neutron-transmutation doped semi-insulating GaAs von Manasreh, M.O., McDonald, P.F., Kivlighn, S.A., Minton, J.T., Covington, B.C.

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