All-optical wavelength conversion by EAM with shifted bandpass filter for high bit-rate networks von Dahdah, N.E., Coquille, R., Charbonnier, B., Pincemin, E., Kazmierski, C., Decobert, J., Vedadi, A., Aubin, G., Ramdane, A.

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Numerical analysis of photorefractive InP:Fe at large fringe contrast von Wolffer, N., Gravey, P., Coquillé, R.

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Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements von LONGERE, J. Y, SCHOHE, K, KRAWCZYK, S. K, COQUILLE, R, L'HARIDON, H, FAVENNEC, P. N

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Characterisation of semi-insulating InP:Fe von Lambert, B, Coquille, R, Gauneau, M, Grandpierre, G, Moisan, G

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Characterization and reliability of a switch matrix based on MOEMS technology von Boyer Heard, I., Coquillé, R., Rivière, D., Klimonda, P.-Y.

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Compensation uniformity of InP:Fe as probed by electron paramagnetic resonance von Boudart, B., Meyer, B., Schwab, C., Coquille, R., Gauneau, M.

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Synthesis, crystal growth and characterization of InP von Coquille, R., Toudic, Y., Gauneau, M., Grandpierre, G., Paris, J.C.

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X-ray topography and tem studies of (Ga,Fe)-double-doped LEC grown InP crystals von Haji, L., Coquille, R., Gauneau, M., Toudic, Y.

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Chromium-doped p-type semi-insulating InP von Toudic, Y, Lambert, B, Coquille, R, Grandpierre, G, Gauneau, M

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Spatial investigation of an iron-doped indium phosphide ingot von L'Haridon, H., Favennec, P.N., Coquille, R., Salvi, M., Gauneau, M., Le Guillou, Y., Callec, R., Gall, P.

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Transmission electron microscopy in situ investigation of dislocation mobilities in inp von Zafrany, M., Voillot, F., Peyrade, J. P., Caillard, D., Couret, A., Coquille, R.

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Thermal activation of deformation in S-doped InP single crystals von Gall, P., Peyrade, J.P., Coquille, R., Reynaud, F.

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Properties of InP doped with 4d ions von Bremond, G, Nouailhat, A, Guillot, G, Toudic, Y, Lambert, B, Gauneau, M, Coquille, R, Deveaud, B

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Deep levels related to Co in InP von ROJO, P, LEYRAL, P, NOUAILHAT, A, GUILLOT, G, LAMBERT, B, DEVEAUD, B, COQUILLE, R

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Novel Optical Wavelength Converter based on EAM for High Bit Rate DWDM Networks von El Dahdah, N., Coquille, R., Charbonnier, B., Pincemin, E., Kazmierski, C., Aubin, G., Ramdane, A.

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Analytical possibilities of medium energy tritium beams (3 < E < 12 MeV) and application to the analysis of oxygen in InP von Bordes, N., Blondiaux, G., Maggiore, C.J., Valladon, M., Debrun, J.L., Coquille, R., Gauneau, M.

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Inhomogeneity in a semi-insulating indium phosphide ingot von L'Haridon, H., Callec, R., Coquillé, R., Favennec, P.N., Fillard, J.P., Gall, P., Gauneau, M., Le Guillou, Y.

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Observation of cellular structures of defects in semi-insulating InP-Fe von Fillard, J.P., Baroudi, A., Gall, P., Bonnafe, J., Favennec, P.N., Coquille, R.

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Use of implanted samples as standards in spark-source mass spectrometry with application to the analysis of III—V semiconductors von Gauneau, M., Rupert, A., Minier, M., Regreny, O., Coquille, R.

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Comparison of twisted and parallel nematic liquid crystal polarisation controllers. Application to a 4 × 4 free space optical switch at 1.5 μm von Pain, F, Coquillé, R, Vinouze, B, Wolffer, N, Gravey, P

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