DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication von JIN, Chong, PAVLIDIS, Dimitris, CONSIDINE, Laurence

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Prospective for Gallium Nitride-Based Optical Waveguide Modulators von STOLZ, Arnaud, CONSIDINE, Laurence, DOGHECHE, Elhadj, DECOSTER, Didier, PAVLIDIS, Dimitris

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Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4 von SEO, Sanghyun, CHO, Eunjung, AROSHVILI, Giorgi, JIN, Chong, PAVLIDIS, Dimitris, CONSIDINE, Laurence

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DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication : Heterostructure Microelectronics with TWHM 2011 von CHONG JIN, PAVLIDIS, Dimitris, CONSIDINE, Laurence

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Gallium nitride based plasmonic multilayer operating at 1.55µm von Stolz, Arnaud, Considine, Laurence, Faci, Salim, Dogheche, El Hadj, Tripon-Canseliet, Charlotte, Loiseau, Brigitte, Pavlidis, Dimitri, Decoster, Didier, Chazelas, Jean

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Gallium-nitride-based plasmonic multilayer operating at 1.55 μm von Stolz, Arnaud, Considine, Laurence, Faci, Salim, Dogheche, Elhadj, Tripon-Canseliet, Charlotte, Loiseaux, Brigitte, Pavlidis, Dimitris, Decoster, Didier, Chazelas, Jean

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Prospective for Gallium Nitride-Based Optical Waveguide Modulators : Heterostructure Microelectronics with TWHM 2011 von STOLZ, Arnaud, CONSIDINE, Laurence, DOGHECHE, Elhadj, DECOSTER, Didier, PAVLIDIS, Dimitris

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Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode von Yilmazoglu, Oktay, Considine, Laurence, Joshi, Ravi, Mimura, Hidenori, Pavlidis, Dimitris, Hartnagel, Hans L., Schneider, Jörg J., Evtukh, Anatoli, Semenenko, Mykola, Litovchenko, Vladimir

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Backside gate thin film transistor based on MOCVD grown ZnO on SiO2/Si substrates von Biethan, Jens-Peter, Bayraktaroglu, Burhan, Considine, Laurence, Pavlidis, Dimitris

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Failure mechanisms associated with the fabrication of InGaN-based LEDs von Maaskant, P., Akhter, M., Considine, L.

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Chemical mapping of InGaN MQWs von Sharma, Nikhil, Tricker, David, Thomas, Paul, Bougrioua, Zahia, Jacobs, Koen, Cheyns, Jan, Moerman, Ingrid, Thrush, Ted, Considine, Laurence, Boyd, Adam, Humphreys, Colin

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Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si sub(3)N sub(4) von Seo, Sanghyun, Cho, Eunjung, Aroshvili, Giorgi, Jin, Chong, Pavlidis, Dimitris, Considine, Laurence

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A novel GaN-based high frequency varactor diode von Chong Jin, Pavlidis, Dimitris, Considine, Laurence

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VERFAHREN ZUR DARSTELLUNG VON BLEI-SCANDIUMTANTALAT-PEROVSKIT von CONSIDINE, LAURENCE, WHATMORE, ROGER, WILLIAM, GOOSEY, MARTIN, TREVOR, PATEL, ANIL

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A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE von CONSIDINE, LAURENCE, WHATMORE, ROGER, WILLIAM, GOOSEY, MARTIN, TREVOR, PATEL, ANIL

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METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE von CONSIDINE, LAURENCE, WHATMORE, ROGER W, GOOSEY, MARTIN T, PATEL, ANIL

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A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE von ANIL PATEL, ROGER WILLIAM WHATMORE, MARTIN TREVOR GOOSEY, LAURENCE CONSIDINE

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A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE von CONSIDINE, LAURENCE, WHATMORE, ROGER, WILLIAM, GOOSEY, MARTIN, TREVOR, PATEL, ANIL

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A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE THIN FILMS von ANIL PATEL, ROGER WILLIAM WHATMORE, MARTIN TREVOR GOOSEY, LAURENCE CONSIDINE

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A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE von ANIL PATEL, ROGER WILLIAM WHATMORE, MARTIN TREVOR GOOSEY, LAURENCE CONSIDINE

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