One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering von Cong, G. W., Wei, H. Y., Zhang, P. F., Peng, W. Q., Wu, J. J., Liu, X. L., Jiao, C. M., Hu, W. G., Zhu, Q. S., Wang, Z. G.

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Synthesis and photoluminescence of ZnS:Cu nanoparticles von Peng, W.Q., Cong, G.W., Qu, S.C., Wang, Z.G.

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Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles von Peng, W. Q., Qu, S. C., Cong, G. W., Wang, Z. G.

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Synthesis of shuttle-like ZnO nanostructures from precursor ZnS nanoparticles von Peng, W Q, Cong, G W, Qu, S C, Wang, Z G

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Demonstration of a 3-dB directional coupler with enhanced robustness to gap variations for silicon wire waveguides von Cong, G W, Suzuki, K, Kim, S H, Tanizawa, K, Namiki, S, Kawashima, H

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Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films von Cong, G. W., Peng, W. Q., Wei, H. Y., Han, X. X., Wu, J. J., Liu, X. L., Zhu, Q. S., Wang, Z. G., Lu, J. G., Ye, Z. Z., Zhu, L. P., Qian, H. J., Su, R., Hong, C. H., Zhong, J., Ibrahim, K., Hu, T. D.

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Aluminium doping induced enhancement of p–d coupling in ZnO von Cong, G W, Peng, W Q, Wei, H Y, Liu, X L, Wu, J J, Han, X X, Zhu, Q S, Wang, Z G, Ye, Z Z, Lu, J G, Zhu, L P, Qian, H J, Su, R, Hong, C H, Zhong, J, Ibrahim, K, Hu, T D

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Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire von Wei, H.Y., Cong, G.W., Zhang, P.F., Hu, W.G., Wu, J.J., Jiao, C.M., Liu, X.L., Zhu, Q.S., Wang, Z.G.

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Optical and magnetic properties of ZnS nanoparticles doped with Mn2 von PENG, W. Q, QU, S. C, CONG, G. W, ZHANG, X. Q, WANG, Z. G

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Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition von Cong, G W, Akimoto, R, Akita, K, Hasama, T, Ishikawa, H

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Structure and visible luminescence of ZnO nanoparticles von Peng, W.Q., Qu, S.C., Cong, G.W., Wang, Z.G.

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Concentration effect of Mn2+ on the photoluminescence of ZnS:Mn nanocrystals von PENG, W. Q, QU, S. C, CONG, G. W, WANG, Z. G

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Investigation of GaN regrowth on InGaN/GaN Nanodisks Fabricated by Neutral Beam Etching von Zhang, Kexiong, Takahashi, T., Ohori, D., Kumagai, N., Cong, G. W., Endo, K., Shimizu, M., Samukawa, S., Wang, X. L.

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High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN von Zhang, Kexiong, Takahashi, T., Kumagai, N., Cong, G. W., Ohori, D., Endo, K., Shimizu, M., Samukawa, S., Wang, X. L.

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Low-damage Fabrication of InGaN/GaN Nanopillars by Neutral Beam Etching: Towards Directional Micro-LED in Top-down Structure von Zhang, Kexiong, Takahashi, T., Kumagai, N., Cong, G. W., Ohori, D., Endo, K., Shimizu, M., Samukawa, S., Wang, X. L.

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Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs von Zhang, Kexiong, Yamada, H., Kumagai, N., Yamada, T., Cong, G. W., Endo, K., Shimizu, M., Ohori, D., Samukawa, S., Wang, X. L.

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Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-... von Cong, G W, Akimoto, R, Gozu, S, Mozume, T, Hasama, T, Ishikawa, H

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Synthesis and Structures of Morphology-Controlled ZnO Nano- and Microcrystals von Peng, Wenqin, Qu, Shengchun, Cong, Guangwei, Wang, Zhanguo

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Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling von Lu, Y., Cong, G. W., Liu, X. L., Lu, D. C., Wang, Z. G., Wu, M. F.

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Low-saturation-energy-driven ultrafast all-optical switching operation in (CdS/ZnSe)/BeTe intersubband transition von Cong, G. W., Akimoto, R., Akita, K., Hasama, T., Ishikawa, H.

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