Advanced CMOS devices: Challenges and implant solutions von Colombeau, Benjamin, Guo, Baonian, Gossmann, Hans-Joachim, Khaja, Fareen, Pradhan, Nilay, Waite, Andrew, Rao, K. V., Thomidis, Christos, Shim, Kyu-Ha, Henry, Todd, Variam, Naushad

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(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling von Colombeau, Benjamin P, Bauer, Matthias, Wood, Bingxi Sun, Chung, Hua, Hebb, Jeffrey, Huang, Yi-Chiau, Tao, Xianzhi, Chopra, Saurabh, Dube, Abhishek, Chudzik, Michael, Chu, Schubert

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Obituary - Dr. Fuccio Cristiano von Alberti, Alessandra, Colombeau, Benjamin, La Magna, Antonino, Hemeryck, Anne, Pelaz, Lourdes, Pichler, Peter

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Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs von Lu, Peng, Colombeau, Benjamin, Hung, Steven, Li, Weicong, Duan, Xicheng, Li, Yifei, Bazizi, El Mehdi, Natarajan, Sanjay, Woo, Jason C. S.

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Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond von Wood, Bingxi Sun, Khaja, Fareen Adeni, Colombeau, Benjamin P, Sun, Shiyu, Waite, Andrew, Jin, Miao, Chen, Hao, Chan, Osbert, Thanigaivelan, Thirumal, Pradhan, Nilay, Gossmann, Hans-Joachim L, Sharma, Shashank, Chavva, Venkataramana R, Cai, Man-Ping, Okazaki, Motoya, Munnangi, Samuel Swaroop, Ni, Chi-Nung, Suen, Wesley, Chang, Chorng-Ping, Mayur, Abhilash, Variam, Naushad, Brand, Adam D

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Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond von Peijie Feng, Seung-Chul Song, Nallapati, Giri, Zhu, John, Bao, Jerry, Moroz, Victor, Munkang Choi, Xi-Wei Lin, Qiang Lu, Colombeau, Benjamin, Breil, Nicolas, Chudzik, Michael, Chidambaram, Chidi

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Physical understanding of cryogenic implant benefits for electrical junction stability von Adeni Khaja, Fareen, Colombeau, Benjamin, Thanigaivelan, Thirumal, Ramappa, Deepak, Henry, Todd

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(Invited) Issues with n-type Dopants in Germanium von Skarlatos, Dimitrios, Ioannou-Sougleridis, Vassilios, Barozzi, Mario, Pepponi, Giancarlo, Vouroutzis, Nikolaos Zisis, Velessiotis, Dimitrios, Stoemenos, John, Zographos, Nikolas, Colombeau, Benjamin P

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A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon von Ortiz, Christophe J., Pichler, Peter, Fühner, Tim, Cristiano, Filadelfo, Colombeau, Benjamin, Cowern, Nicholas E. B., Claverie, Alain

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Benefits of Damage Engineering for PMOS Junction Stability von Khaja, Fareen, Colombeau, Benjamin, Thanigaivelan, Thirumal, Ramappa, Deepak, Henry, Todd

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Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs von Sklenard, Benoit, Batude, Perrine, Rafhay, Quentin, Martin-Bragado, Ignacio, Xu, Cuiqin, Previtali, Bernard, Colombeau, Benjamin, Khaja, Fareen-Adeni, Cristoloveanu, Sorin, Rivallin, Pierrette, Tavernier, Clement, Poiroux, Thierry

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Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys von Payet, Anthony, Luce, Flavia Piegas, Curfs, Caroline, Mathieu, Benoît, Sklénard, Benoît, Barbé, Jean-Charles, Batude, Perrine, Joblot, Sylvain, Tavernier, Clément, Colombeau, Benjamin, Guissi, Sofiene, Martin-Bragado, Ignacio, Gergaud, Patrice

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Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs: Selected extended papers from ULIS 2012 conference von SKLENARD, Benoit, BATUDE, Perrine, TAVERNIER, Clement, POIROUX, Thierry, RAFHAY, Quentin, MARTIN-BRAGADO, Ignacio, CUIQIN XU, PREVITALI, Bernard, COLOMBEAU, Benjamin, KHAJA, Fareen-Adeni, CRISTOLOVEANU, Sorin, RIVALLIN, Pierrette

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(Invited) Next Generation CMOS Devices: Transistor Module Challenges and Opportunities von Colombeau, Benjamin P

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Defect engineering by surface chemical state in boron-doped preamorphized silicon von Yeong, S. H., Srinivasan, M. P., Colombeau, Benjamin, Chan, Lap, Akkipeddi, Ramam, Kwok, Charlotte T. M., Vaidyanathan, Ramakrishnan, Seebauer, Edmund G.

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HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS von Gossmann, Hans-Joachim, Colombeau, Benjamin

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Horizontal GAA nano-wire and nano-slab transistors von Gossmann, Hans-Joachim, Colombeau, Benjamin

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Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies von Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Zou Wei, Guo Baonian, Khasgiwale, Niranjan, Decker-Lucke, Kurt

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'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants von Guo Baonian, Gossmann, Hans-Joachim, Toh, Terry, Colombeau, Benjamin, Todorov, Stan, Sinclair, Frank, Shim, Kyu-Ha, Henry, Todd

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Thermal evolution of extended defects in implanted Si von Claverie, Alain, Colombeau, Benjamin, Ben Assayag, Gérard, Bonafos, Caroline, Cristiano, Filadelfo, Omri, Mourad, de Mauduit, Bernadette

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