Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors von Ferain, Isabelle, Colinge, Cynthia A., Colinge, Jean-Pierre

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Junctionless multigate field-effect transistor von Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Colinge, Jean-Pierre

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High-Temperature Performance of Silicon Junctionless MOSFETs von Chi-Woo Lee, Borne, A., Ferain, I., Afzalian, A., Yan, R., Dehdashti Akhavan, N., Razavi, P., Colinge, J.-P.

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Performance estimation of junctionless multigate transistors von Lee, Chi-Woo, Ferain, Isabelle, Afzalian, Aryan, Yan, Ran, Akhavan, Nima Dehdashti, Razavi, Pedram, Colinge, Jean-Pierre

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Junctionless Multiple-Gate Transistors for Analog Applications von Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Chi-Woo Lee, Ferain, I., Akhavan, N. D., Ran Yan, Razavi, P., Ran Yu, Kranti, A., Colinge, J.

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Low subthreshold slope in junctionless multigate transistors von Lee, Chi-Woo, Nazarov, Alexei N., Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Doria, Rodrigo T., Colinge, Jean-Pierre

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Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors von Tae Park, Jong, Young Kim, Jin, Pierre Colinge, Jean

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Multiple-gate SOI MOSFETs von Colinge, Jean-Pierre

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Low-frequency noise in junctionless multigate transistors von Jang, Doyoung, Lee, Jae Woo, Lee, Chi-Woo, Colinge, Jean-Pierre, Montès, Laurent, Lee, Jung Il, Kim, Gyu Tae, Ghibaudo, Gérard

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Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates von Yu, Ran, Das, Samaresh, Ferain, Isabelle, Razavi, Pedram, Shayesteh, Maryam, Kranti, Abhinav, Duffy, Ray, Colinge, Jean-Pierre

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Cryogenic Operation of Junctionless Nanowire Transistors von de Souza, M., Pavanello, M. A., Trevisoli, R. D., Doria, R. T., Colinge, J.

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Influence of channel material properties on performance of nanowire transistors von Razavi, Pedram, Fagas, Giorgos, Ferain, Isabelle, Yu, Ran, Das, Samaresh, Colinge, Jean-Pierre

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Low-temperature conductance oscillations in junctionless nanowire transistors von Park, Jong-Tae, Kim, Jin Young, Lee, Chi-Woo, Colinge, Jean-Pierre

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Nanowire transistors without junctions von Colinge, Jean-Pierre, Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Razavi, Pedram, O'Neill, Brendan, Blake, Alan, White, Mary, Kelleher, Anne-Marie, McCarthy, Brendan, Murphy, Richard

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Nanowire Transistors: Physics of Devices and Materials in One Dimension von Colinge, Jean-Pierre, Greer, James C.

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Simulation of junctionless Si nanowire transistors with 3 nm gate length von Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C.

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Reduced electric field in junctionless transistors von Colinge, Jean-Pierre, Lee, Chi-Woo, Ferain, Isabelle, Akhavan, Nima Dehdashti, Yan, Ran, Razavi, Pedram, Yu, Ran, Nazarov, Alexei N., Doria, Rodrigo T.

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Persistent Floating‐Body Effects in Fully Depleted Silicon‐on‐Insulator Transistors von Park, Hyungjin, Colinge, Jean-Pierre, Cristoloveanu, Sorin, Bawedin, Maryline

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Characterization of a junctionless diode von Yu, Ran, Ferain, Isabelle, Akhavan, Nima Dehdashti, Razavi, Pedram, Duffy, Ray, Colinge, Jean-Pierre

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A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin) von Ansari, Lida, Fagas, Giorgos, Colinge, Jean-Pierre, Greer, James C

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