Impact of Gate-Induced Strain on MuGFET Reliability von Nathanael, R., Weize Xiong, Rinn Cleavelin, C., Tsu-Jae King Liu

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Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility von Xiong, W., Cleavelin, C.R., Kohli, P., Huffman, C., Schulz, T., Schruefer, K., Gebara, G., Mathews, K., Patruno, P., Le Vaillant, Y.-M., Cayrefourcq, I., Kennard, M., Mazure, C., Shin, K., Liu, T.-J.K.

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Full/partial depletion effects in FinFETs von XIONG, W, RINN CLEAVELIN, C, KING, T.-J, COLINGE, J. P, WISE, R, YU, S, PAS, M, ZAMAN, R. J, GOSTKOWSKI, M, MATTHEWS, K, MALEVILLE, C, PATRUNO, P

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Low-temperature electron mobility in Trigate SOI MOSFETs von Colinge, J.-P., Quinn, A.J., Floyd, L., Redmond, G., Alderman, J.C., Weize Xiong, Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.

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Improvement of FinFET electrical characteristics by hydrogen annealing von Weize Xiong, Gebara, G., Zaman, J., Gostkowski, M., Nguyen, B., Smith, G., Lewis, D., Cleavelin, C.R., Wise, R., Shaofeng Yu, Pas, M., Tsu-Jae King, Colinge, J.P.

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Quantum-mechanical effects in trigate SOI MOSFETs von Colinge, J.-P., Alderman, J.C., Weize Xiong, Cleavelin, C.R.

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Temperature effects on trigate SOI MOSFETs von Colinge, J.-P., Floyd, L., Quinn, A.J., Redmond, G., Alderman, J.C., Xiong, W., Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.

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Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology von Joshi, Sachin, Sahu, Bhagwan, Banerjee, Sanjay K., Ciucivara, Adrian, Kleinman, Leonard, Wise, Rick, Cleavelin, Rinn, Pinto, Angelo, Seacrist, Mike, Ries, Mike, Huang, Y.-T., Ma, Mike, Lin, C.-T.

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Radiation Dose Effects in Trigate SOI MOS Transistors von Colinge, J. P., Orozco, A., Rudee, J., Xiong, Weize, Cleavelin, C. Rinn, Schulz, T., Schrufer, K., Knoblinger, G., Patruno, P.

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Theoretical and experimental investigation of valence band offsetsfor direct silicon bond hybrid orientation technology von Joshi, Sachin, Sahu, Bhagwan, Banerjee, Sanjay K., Ciucivara, Adrian, Kleinman, Leonard, Wise, Rick, Cleavelin, Rinn, Pinto, Angelo, Seacrist, Mike, Ries, Mike, Huang, Y.-T., Ma, Mike, Lin, C.-T.

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Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology von Joshi, S., Pinto, A., Huang, Y.-T., Wise, R., Cleavelin, R., Seacrist, M., Ries, M., Ramin, M., Freeman, M., Nguyen, B., Matthews, K., Wilks, B., Denning, L., Johnson, C., Bennet, J., Ma, M., Lin, C.-T., Banerjee, S.K.

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Body effect in tri- and pi-gate SOI MOSFETs von Frei, J., Johns, C., Vazquez, A., Weize Xiong, Cleavelin, C.R., Schulz, T., Chaudhary, N., Gebara, G., Zaman, J.R., Gostkowski, M., Matthews, K., Colinge, J.-P.

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Preparation, Characterization, and Damage-Free Processing of Advanced Multiple-Gate FETs von Lauerhaas, Jeffrey M., Lee, Hu Cheng, Cleavelin, Rinn, Xiong, Wei Ze, Sherman, Kara, Mochizuki, Koki, Schruefer, Klaus, Schulz, Thomas, Clappin, Brian

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Study of bending-induced strain effects on MuGFET performance von Shin, K., Weize Xiong, Chung Yeung Cho, Cleavelin, C.R., Schulz, T., Schruefer, K., Patruno, P., Smith, L., Tsu-Jae King Liu

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Improved hot-electron reliability in strained-Si nMOS von Onsongo, D., Kelly, D.Q., Dey, S., Wise, R.L., Cleavelin, C.R., Banerjee, S.K.

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MuGFET carrier mobility and velocity: Impacts of fin aspect ratio, orientation and stress von Nuo Xu, Xin Sun, Weize Xiong, Cleavelin, C Rinn, Tsu-Jae King Liu

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SEALED RESISTIVE CHANGE ELEMENTS von RUECKES, Thomas, BERTIN, Claude, CLEAVELIN, Rinn

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Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer von Patruno, P., Kostrzewa, M., Landry, K., Weize Xiong, Cleavelin, C.R., Che-Hua Hsu, Ma, M., Colinge, J.-P.

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Unique ESD Failure Mechanism in a MuGFET Technology von Gossner, H., Russ, C., Siegelin, F., Schneider, J., Schruefer, K., Schulz, T., Duvvury, C., Rinn Cleavelin, C., Weize Xiong

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Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET von Weize Xiong, Young, C., Matthew, K., Rinn Cleavelin, C., Schulz, T., Schruefer, K., Patruno, P.

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