Impact of Gate-Induced Strain on MuGFET Reliability von Nathanael, R., Weize Xiong, Rinn Cleavelin, C., Tsu-Jae King Liu

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Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility von Xiong, W., Cleavelin, C.R., Kohli, P., Huffman, C., Schulz, T., Schruefer, K., Gebara, G., Mathews, K., Patruno, P., Le Vaillant, Y.-M., Cayrefourcq, I., Kennard, M., Mazure, C., Shin, K., Liu, T.-J.K.

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Full/partial depletion effects in FinFETs von XIONG, W, RINN CLEAVELIN, C, KING, T.-J, COLINGE, J. P, WISE, R, YU, S, PAS, M, ZAMAN, R. J, GOSTKOWSKI, M, MATTHEWS, K, MALEVILLE, C, PATRUNO, P

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Low-temperature electron mobility in Trigate SOI MOSFETs von Colinge, J.-P., Quinn, A.J., Floyd, L., Redmond, G., Alderman, J.C., Weize Xiong, Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.

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Improvement of FinFET electrical characteristics by hydrogen annealing von Weize Xiong, Gebara, G., Zaman, J., Gostkowski, M., Nguyen, B., Smith, G., Lewis, D., Cleavelin, C.R., Wise, R., Shaofeng Yu, Pas, M., Tsu-Jae King, Colinge, J.P.

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Temperature effects on trigate SOI MOSFETs von Colinge, J.-P., Floyd, L., Quinn, A.J., Redmond, G., Alderman, J.C., Xiong, W., Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.

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Quantum-mechanical effects in trigate SOI MOSFETs von Colinge, J.-P., Alderman, J.C., Weize Xiong, Cleavelin, C.R.

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Radiation Dose Effects in Trigate SOI MOS Transistors von Colinge, J. P., Orozco, A., Rudee, J., Xiong, Weize, Cleavelin, C. Rinn, Schulz, T., Schrufer, K., Knoblinger, G., Patruno, P.

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Body effect in tri- and pi-gate SOI MOSFETs von Frei, J., Johns, C., Vazquez, A., Weize Xiong, Cleavelin, C.R., Schulz, T., Chaudhary, N., Gebara, G., Zaman, J.R., Gostkowski, M., Matthews, K., Colinge, J.-P.

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MuGFET carrier mobility and velocity: Impacts of fin aspect ratio, orientation and stress von Nuo Xu, Xin Sun, Weize Xiong, Cleavelin, C Rinn, Tsu-Jae King Liu

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Study of bending-induced strain effects on MuGFET performance von Shin, K., Weize Xiong, Chung Yeung Cho, Cleavelin, C.R., Schulz, T., Schruefer, K., Patruno, P., Smith, L., Tsu-Jae King Liu

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Improved hot-electron reliability in strained-Si nMOS von Onsongo, D., Kelly, D.Q., Dey, S., Wise, R.L., Cleavelin, C.R., Banerjee, S.K.

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Comparison of Short-Channel Effects in SOI and sSOI Triple-Gate MOSFETs von Cristoloveanu, S., Bae, Young Ho, Xiong, Wade, Cleavelin, C. Rinn, Patruno, Paul, Lee, Jung Hee

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Unique ESD Failure Mechanism in a MuGFET Technology von Gossner, H., Russ, C., Siegelin, F., Schneider, J., Schruefer, K., Schulz, T., Duvvury, C., Rinn Cleavelin, C., Weize Xiong

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The Chalkboard: Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistor von Tao, Meng, Wallace, Robert W., Cleavelin, C. Rinn, Wise, Rick L.

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Full/partial depletion effects in FinFETs von Xiong, W, Cleavelin, C Rinn, Wise, R, Yu, S, Pas, M, Zaman, R J, Gostkowski, M, Matthews, K, Maleville, C, Patruno, P, King, T-J, Colinge, J P

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Electrostatic discharge protection devices using carbon-based diodes von Cleavelin, C. Rinn, Huang, X. M. Henry, Rueckes, Thomas, Bertin, Claude L

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Methods of making sealed resistive change elements von Cleavelin, C. Rinn, Rueckes, Thomas, Bertin, Claude L

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Methods of Making Sealed Resistive Change Elements von Cleavelin, C. Rinn, Rueckes, Thomas, Bertin, Claude L

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Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications von Xiong, Weize W., Cleavelin, C. Rinn, Hsu, Che-Hua, Ma, Mike, Schruefer, Klaus, Von Arnim, Klaus, Schulz, Thomas, Cayrefourcq, Ian, Mazure, Carlos, Patruno, Paul, Kennard, Mark, Shin, Kyoungsub, Xin, Sun, King Liu, Tsu-Jae, Cherkaoui, Karim, Colinge, J.P.

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