Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N/sub 2/O oxynitridation von Kim, Y.-S., Okada, Y., Chang, K.-M., Tobin, P.J., Morton, B., Choe, H., Bowers, M., Kuo, C., Chrudimsky, D., Ajuria, S.A., Yeargain, J.R.

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A 32-bit RISC microcontroller with 448K bytes of embedded flash memory von Kuo, C., Chrudimsky, D., Jew, T., Gallun, C., Choy, J., Wang, B., Pessoney, S., Choe, H., Harrington, C., Eguchi, R., Strauss, T., Prinz, E., Swift, C.

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Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N2O oxynitridation von YEONG-SEUK KIM, OKADA, Y, YEARGAIN, J. R, KO-MIN CHANG, TOBIN, P. J, MORTON, B, CHOE, H, BOWERS, M, KUO, C, CHRUDIMSKY, D, AJURIA, S. A

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Low-defect-density and high-reliability FETMOS EEPROM' s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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New submicron non-volatile memory modules for 16/32-bit devices von Kuo, C., Morton, B., Toms, T., Weidner, M., Chrudimsky, D., Choe, H., Bowers, M., Yeon-seuk Kim, Chang, K.M., Smith, P.

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Memory array with global bitline domino read/write scheme von ANDRADE VICTOR F, POSEY RANDAL L, CIRAULA MICHAEL K, NOVAK AMY M, SCHAEFER ALEXANDER W, HUBER JAN MICHAEL, BRAGANZA MICHAEL C, MOENCH JERRY D, DANKERT FLOYD L, CHRUDIMSKY SOOLIN KAO

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Memory array with global bitline domino read/write scheme von Dankert, Floyd L, Andrade, Victor F, Posey, Randal L, Ciraula, Michael K, Schaefer, Alexander W, Moench, Jerry D, Chrudimsky, Soolin Kao, Braganza, Michael C, Huber, Jan Michael, Novak, Amy M

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