A GexSe1-x switch-only-memory technology through polarized atomic distribution von Liu, Zhi-Lun, Grun, Alexander, Chien, Wei-Chih, Ray, Asit, Lai, Erh-Kun, Kuo, I-Ting, Gignac, Lynne, Lavoie, Christian, BrightSky, Matt, Lung, Hsiang-Lan, Cheng, Huai-Yu

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Archipelago-wide island restoration in the Galápagos Islands: reducing costs of invasive mammal eradication programs and reinvasion risk von Carrion, Victor, Donlan, C Josh, Campbell, Karl J, Lavoie, Christian, Cruz, Felipe

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Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications von Dey, Sonal, Yu, Kai-Hung, Consiglio, Steven, Tapily, Kandabara, Hakamata, Takahiro, Wajda, Cory S., Leusink, Gert J., Jordan-Sweet, Jean, Lavoie, Christian, Muir, David, Moreno, Beatriz, Diebold, Alain C.

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(Invited) Contacts in Advanced CMOS: History and Emerging Challenges von Lavoie, Christian, Adusumilli, Praneet, Carr, Adra V, Jordan Sweet, Jean S., Ozcan, Ahmet S, Levrau, Elisabeth, Breil, Nicolas, Alptekin, Emre

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node von Zhen Zhang, Koswatta, S. O., Bedell, S. W., Baraskar, A., Guillorn, M., Engelmann, S. U., Yu Zhu, Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Li Yang, Fei Liu, Newbury, J., Wei Song, Cabral, C., Lofaro, M., Ozcan, A. S., Raymond, M., Lavoie, C., Sleight, J. W., Rodbell, K. P., Solomon, P. M.

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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate von Zhang, Zhen, Zhang, Shi-Li, Yang, Bin, Zhu, Yu, Rossnagel, Stephen M., Gaudet, Simon, Kellock, Andrew J., Jordan-Sweet, Jean, Lavoie, Christian

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Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cycl... von Vasić, Relja, Consiglio, Steven, Clark, Robert D., Tapily, Kandabara, Sallis, Shawn, Chen, Bo, Newby, David, Medikonda, Manasa, Raja Muthinti, Gangadhara, Bersch, Eric, Jordan-Sweet, Jean, Lavoie, Christian, Leusink, Gert J., Diebold, Alain C.

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Stress determination in nickel monosilicide films using x-ray diffraction von Murray, Conal E., Zhang, Zhen, Lavoie, Christian

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Fifteen years of lessons from the Seascape approach: A framework for improving ocean management at scale von Murphy, Shannon E., Farmer, Ginny, Katz, Laure, Troëng, Sebastian, Henderson, Scott, Erdmann, Mark V., Corrigan, Colleen, Gold, Barry, Lavoie, Christian, Quesada, Marco, Díazgranados Cadelo, María Claudia, Guzmán Mora, Ana Gloria, Nunez, Enrique, Montebon, Augustus, Meo, Semisi, Waqainabete‐Tuisese, Susana, Dutra, Guilherme, Pereira, Renata, Mongdong, Meity, Putra, Ketut S.

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Recovery of the Galápagos rail ( Laterallus spilonotus) following the removal of invasive mammals von Donlan, C. Josh, Campbell, Karl, Cabrera, Wilson, Lavoie, Christian, Carrion, Victor, Cruz, Felipe

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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films von Zhang, Zhen, Yang, Bin, Zhu, Yu, Gaudet, Simon, Rossnagel, Steve, Kellock, Andrew J., Ozcan, Ahmet, Murray, Conal, Desjardins, Patrick, Zhang, Shi-Li, Jordan-Sweet, Jean, Lavoie, Christian

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Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films von Li, Zhefeng, Gordon, Roy G., Li, Huazhi, Shenai, Deo V., Lavoie, Christian

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In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide von Tran, Tuan T., Lavoie, Christian, Zhang, Zhen, Primetzhofer, Daniel

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Thin film deposition research and its impact on microelectronics scaling von Cabral, Cyril, Lavoie, Christian, Murray, Conal, Pyzyna, Adam, Rodbell, Ken

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Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application von Ohuchi, Kazuya, Lavoie, Christian, Yang, Bin, Kondo, Masaki, Matsuzawa, Kazuya, Solomon, Paul M

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Nucleation and lateral growth kinetics of the NiSi phase at the epitaxial θ-Ni2Si/Si interface von El Kousseifi, Mike, Hoummada, Khalid, Panciera, Federico, Lavoie, Christian, Mangelinck, Dominique

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Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application von Ohuchi, Kazuya, Lavoie, Christian, Yang, Bin, Kondo, Masaki, Matsuzawa, Kazuya, Solomon, Paul M.

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Optical conductivity of Ni1 − xPtx alloys (0<x<0.25) from 0.76 to 6.6 eV von Abdallah, Lina S, Tawalbeh, Tarek M, Vasiliev, Igor V, Zollner, Stefan, Lavoie, Christian, Ozcan Ahmet, Raymond, Mark

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Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis von Wolf, Philipp M., Pitthan, Eduardo, Zhang, Zhen, Lavoie, Christian, Tran, Tuan T., Primetzhofer, Daniel

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Diffusion in intermetallic compounds: the ordered Cu 3 Au rule, its history von d’Heurle, François M., Gas, Patrick, Lavoie, Christian, Philibert, Jean

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