Wafer-Scale, Homogeneous MoS2 Layers on Plastic Substrates for Flexible Visible-Light Photodetectors von Lim, Yi Rang, Song, Wooseok, Han, Jin Kyu, Lee, Young Bum, Kim, Sung Jun, Myung, Sung, Lee, Sun Sook, An, Ki-Seok, Choi, Chel-Jong, Lim, Jongsun

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Anomalous Optoelectric Properties of an Ultrathin Ruthenium Film with a Surface Oxide Layer for Flexible Transparent Conducting Electrodes von Oh, Jae Myoung, Nasir, Mohammad, Ryu, Byungki, Yun, Hyung Joong, Choi, Chel‐Jong, Bae, Jong‐Seong, Park, Hee Jung

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2D Single‐Crystalline Copper Nanoplates as a Conductive Filler for Electronic Ink Applications von Lee, Jin‐Won, Han, Jiyoon, Lee, Dong Su, Bae, Sukang, Lee, Sang Hyun, Lee, Seoung‐Ki, Moon, Byung Joon, Choi, Chel‐Jong, Wang, Gunuk, Kim, Tae‐Wook

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Controlled Electronic and Magnetic Landscape in Self‐Assembled Complex Oxide Heterostructures von Park, Dae‐Sung, Rata, Aurora Diana, Dahm, Rasmus Tindal, Chu, Kanghyun, Gan, Yulin, Maznichenko, Igor, Ostanin, Sergey, Trier, Felix, Baik, Hionsuck, Choi, Woo Seok, Choi, Chel‐Jong, Kim, Young Heon, Rees, Gregory Jon, Gíslason, Hafliði Pétur, Buczek, Paweł Adam, Mertig, Ingrid, Ionescu, Mihai Adrian, Ernst, Arthur, Dörr, Kathrin, Muralt, Paul, Pryds, Nini

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Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes von Sekhar Reddy, P. R., Janardhanam, V., Rajagopal Reddy, V., Park, Min Hyuk, Choi, Chel-Jong

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Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer von Reddy, V. Rajagopal, Prasad, C. Venkata, Janardhanam, V., Choi, Chel-Jong

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Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure von Pandit, Bhishma, Jang, Hyeon‐Sik, Jeong, Yunjo, An, Sangmin, Chandramohan, S., Min, Kyung Kyu, Won, Sang Min, Choi, Chel‐Jong, Cho, Jaehee, Hong, Seongin, Heo, Keun

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Microstructural, wetting, and dielectric properties of plasma polymerized polypyrrole thin films von Koduru, Hari Krishna, Marino, Lucia, Vallivedu, Janardhanam, Choi, Chel-Jong, Scaramuzza, Nicola

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Substrate temperature influenced ZrO2 films for MOS devices von Kondaiah, Paruchuri, Jagadeesh Chandra, S.V., Fortunato, Elvira, Chel Jong, Choi, Mohan Rao, G., Koti Reddy, D.V. Rama, Uthanna, S.

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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer von Khurelbaatar, Zagarzusem, Kil, Yeon-Ho, Yun, Hyung-Joong, Shim, Kyu-Hwan, Nam, Jung Tae, Kim, Keun-Soo, Lee, Sang-Kwon, Choi, Chel-Jong

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Dose-dependency of contact resistance and sheet resistance of B-implanted emitters for N-type crystalline Si solar cells fabricated using screen-printed fire-through Ag/Al paste me... von Ok, Young-Woo, Kim, Jong-Hee, Upadhyaya, Vijaykumar D., Rohatgi, Ajeet, Hong, Chang-Hee, Choi, Chel-Jong

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Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping von Park, Dae‐Sung, Rees, Gregory J., Wang, Haiyuan, Rata, Diana, Morris, Andrew J., Maznichenko, Igor V., Ostanin, Sergey, Bhatnagar, Akash, Choi, Chel‐Jong, Jónsson, Ragnar D. B., Kaufmann, Kai, Kashtiban, Reza, Walker, Marc, Chiang, Cheng‐Tien, Thorsteinsson, Einar B., Luo, Zhengdong, Park, In‐Sung, Hanna, John V., Mertig, Ingrid, Dörr, Kathrin, Gíslason, Hafliði P., McConville, Chris F.

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Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction von Reddy, P. R. Sekhar, Janardhanam, V., Jyothi, I., Harsha, Cirandur Sri, Reddy, V. Rajagopal, Lee, Sung-Nam, Won, Jonghan, Choi, Chel-Jong

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A study of the correlation between the oxidation degree and thickness of graphene oxides von Park, Jaejun, Lee, Wonki, Nam, Jungtae, Han, Joong Tark, Choi, Chel-Jong, Hwang, Jun Yeon

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Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells von Ryu, Kyungsun, Upadhyaya, Ajay, Song, Hyun-Jin, Choi, Chel-Jong, Rohatgi, Ajeet, Ok, Young-Woo

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Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate von Jang, Han-Soo, Kim, Jong Hee, Janardhanam, Vallivedu, Jeong, Hyun-Ho, Kim, Seong-Jong, Choi, Chel-Jong

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Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures von Huh, Chul, Kim, Kyung-Hyun, Kim, Bong Kyu, Kim, Wanjoong, Ko, Hyunsung, Choi, Chel-Jong, Sung, Gun Yong

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CdS quantum dots grown by in situ chemical bath deposition for quantum dot-sensitized solar cells von Woo Jung, Sung, Kim, Jae-Hong, Kim, Hyunsoo, Choi, Chel-Jong, Ahn, Kwang-Soon

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Direct Observation of the Structural Component of the Metal−Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires von Sohn, Jung Inn, Joo, Heung Jin, Porter, Alexandra E., Choi, Chel-Jong, Kim, Kinam, Kang, Dae Joon, Welland, Mark E.

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Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization von Reddy, D. Surya, Janardhanam, V., Reddy, V. Rajagopal, Choi, Chel-Jong

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