Tuning the electrical properties of zirconium oxide thin films von Cho, Byeong-Ok, Wang, Jianjun, Sha, Lin, Chang, Jane P.

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Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma von Lee, Won Oh, Kim, Ki Hyun, Kim, Doo San, Ji, You Jin, Kang, Ji Eun, Tak, Hyun Woo, Park, Jin Woo, Song, Han Dock, Kim, Ki Seok, Cho, Byeong Ok, Kim, Young Lae, Yeom, Geun Young

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Ion-enhanced chemical etching of ZrO2 in a chlorine discharge von Sha, Lin, Cho, Byeong-Ok, Chang, Jane P.

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Material characteristics of electrically tunable zirconium oxide thin films von Cho, Byeong-Ok, Chang, Jane P., Min, Jae-Ho, Moon, Sang H., Kim, Yil W., Levin, Igor

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Angular dependence of SiO2 etching in a fluorocarbon plasma von Cho, Byeong-Ok, Hwang, Sung-Wook, Lee, Gyeo-Re, Moon, Sang Heup

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Origin and effect of impurity incorporation in plasma-enhanced ZrO2 deposition von Cho, Byeong-Ok, Lao, Sandy X., Chang, Jane P.

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Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide von Tak, Hyun Woo, Lee, Hye Joo, Wen, Long, Kang, Byung Jin, Sung, Dain, Bae, Jeong Woon, Kim, Dong Woo, Lee, Wonseok, Lee, Seung Bae, Kim, Keunsuk, Cho, Byeong Ok, Kim, Young Lea, Song, Han Dock, Yeom, Geun Young

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Highly selective etching of SiNx over SiO2 using ClF3/Cl2 remote plasma von Yoo, Seong Jae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Kim, Young Lae, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong Woo, Yeom, Geun Young

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Highly selective etching of SiN x over SiO 2 using ClF 3 /Cl 2 remote plasma von Yoo, Seongjae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Lae Kim, Young, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong-Woo, Yeom, Geun Young

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Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers von Lee, Hye Joo, Tak, Hyun Woo, Kim, Seong Bae, Kim, Seul Ki, Park, Tae Hyun, Kim, Ji Yeun, Sung, Dain, Lee, Wonseok, Lee, Seung Bae, Kim, Keunsuk, Cho, Byeong Ok, Kim, Young Lea, Lee, Ki Chan, Kim, Dong Woo, Yeom, Geun Young

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Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide von Cho, Byeong-Ok, Lao, Sandy, Sha, Lin, Chang, Jane P.

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Highly selective etching of SiNxover SiO2using ClF3/Cl2remote plasma von Yoo, Seong Jae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Kim, Young Lae, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong Woo, Yeom, Geun Young

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More vertical etch profile using a Faraday cage in plasma etching von Cho, Byeong-Ok, Hwang, Sung-Wook, Ryu, Jung-Hyun, Moon, Sang Heup

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Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma von Cho, Byeong-Ok, Hwang, Sung-Wook, Lee, Gyeo-Re, Moon, Sang Heup

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Trajectories of ions inside a Faraday cage located in a high density plasma etcher von Ryu, Jung-Hyun, Cho, Byeong-Ok, Hwang, Sung-Wook, Moon, Sang Heup, Kim, Chang-Koo

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Selective etching of silicon nitride over silicon oxide using ClF 3 /H 2 remote plasma von Lee, Won Oh, Kim, Ki Hyun, Kim, Doo San, Ji, You Jin, Kang, Ji Eun, Tak, Hyun Woo, Park, Jin Woo, Song, Han Dock, Kim, Ki Seok, Cho, Byeong Ok, Kim, Young Lae, Yeom, Geun Young

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Sidewall-angle effect on the bottom etch profile in SiO2 etching using a CF4 plasma von Lee, Gyeo-Re, Cho, Byeong-Ok, Hwang, Sung-Wook, Moon, Sang Heup

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Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition von Cho, Byeong-Ok, Wang, Jianjun, Chang, Jane P.

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Ammonia-based solid oxide fuel cell (SOFC) system in which temperature rise using heating element is applied, and operation method therefor von Lee, Kyoung Jin, Kim, Young Lae, Cho, Byeong Ok, Jung, Suk Yong

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AMMONIA-BASED SOLID OXIDE FUEL CELL (SOFC) SYSTEM IN WHICH TEMPERATURE RISE USING HEATING ELEMENT IS APPLIED, AND OPERATION METHOD THEREFOR von JUNG, Suk Yong, LEE, Kyoung Jin, CHO, Byeong Ok, KIM, Young Lae

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