Binarized neural network of diode array with high concordance to vector–matrix multiplication von Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

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New ternary inverter with memory function using silicon feedback field-effect transistors von Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

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Universal logic-in-memory cell enabling all basic Boolean algebra logic von Baek, Eunwoo, Cho, Kyoungah, Kim, Sangsig

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One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors von Choi, Sangik, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

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Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors von Jeon, Juhee, Woo, Sola, Cho, Kyoungah, Kim, Sangsig

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Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure von Han, Jongseong, Son, Jaemin, Ryu, Seungho, Cho, Kyoungah, Kim, Sangsig

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Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges von Yang, Yejin, Park, Young-Soo, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

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Flexible Thermoelectric Generators Composed of n‐and p‐Type Silicon Nanowires Fabricated by Top‐Down Method von Choi, Jinyong, Cho, Kyoungah, Kim, Sangsig

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NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors von Yang, Yejin, Jeon, Juhee, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

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Steep switching characteristics of single-gated feedback field-effect transistors von Kim, Minsuk, Kim, Yoonjoong, Lim, Doohyeok, Woo, Sola, Cho, Kyoungah, Kim, Sangsig

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Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates von Park, Sukhyung, Cho, Kyoungah, Oh, Hyungon, Kim, Sangsig

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Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors von Son, Jaemin, Shin, Yunwoo, Cho, Kyoungah, Kim, Sangsig

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Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing von Son, Jaemin, Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

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Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing von Shin, Yunwoo, Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

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Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors von Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

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Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors von Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig

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Large Voltage Generation of Flexible Thermoelectric Nanocrystal Thin Films by Finger Contact von Choi, Jinyong, Cho, Kyoungah, Yun, Junggwon, Park, Yoonbeom, Yang, Seunggen, Kim, Sangsig

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Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor von Baek, Eunwoo, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig

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Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor von Lee, Sojeong, Lee, Won-Yong, Jang, Bongho, Kim, Taegyun, Bae, Jin-Hyuk, Cho, Kyoungah, Kim, Sangsig, Jang, Jaewon

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Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions von Oh, Hyungon, Cho, Kyoungah, Kim, Sangsig

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