Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure von Jang, Jisu, Son, Myungwoo, Chung, Sunki, Kim, Kihyeun, Cho, Chunhum, Lee, Byoung Hun, Ham, Moon-Ho

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Demonstration of Complementary Ternary Graphene Field-Effect Transistors von Kim, Yun Ji, Kim, So-Young, Noh, Jinwoo, Shim, Chang Hoo, Jung, Ukjin, Lee, Sang Kyung, Chang, Kyoung Eun, Cho, Chunhum, Lee, Byoung Hun

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Facile process to clean PMMA residue on graphene using KrF laser annealing von Hwang, Hyeon Jun, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

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A graphene barristor using nitrogen profile controlled ZnO Schottky contacts von Hwang, Hyeon Jun, Chang, Kyoung Eun, Yoo, Won Beom, Shim, Chang Hoo, Lee, Sang Kyung, Yang, Jin Ho, Kim, So-Young, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

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Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors von Kang, Chang Goo, Lee, Young Gon, Lee, Sang Kyung, Park, Eunji, Cho, Chunhum, Lim, Sung Kwan, Hwang, Hyeon Jun, Lee, Byoung Hun

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Effects of multi-layer graphene capping on Cu interconnects von Kang, Chang Goo, Lim, Sung Kwan, Lee, Sangchul, Lee, Sang Kyung, Cho, Chunhum, Lee, Young Gon, Hwang, Hyeon Jun, Kim, Younghun, Choi, Ho Jun, Choe, Sun Hee, Ham, Moon-Ho, Lee, Byoung Hun

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE MoS2 stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories von Kim, Seonghyun, Park, Jubong, Woo, Jiyong, Cho, Chunhum, Lee, Wootae, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Lee, Byoung Hun, Hwang, Hyunsang

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Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers von Park, Woojin, Kim, Yonghun, Jung, Ukjin, Yang, Jin Ho, Cho, Chunhum, Kim, Yun Ji, Hasan, Syed Mohammad Najib, Kim, Hyun Gu, Lee, Han Bo Ram, Lee, Byoung Hun

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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC von Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Lee, Seung Yong, Kang, Chang Goo, Hwang, Hyunsang, Lee, Byoung Hun

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Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment von CHANG GOO KANG, SANG KYUNG LEE, BYOUNG HUN LEE, YOUNG GON LEE, HYEON JUN HWANG, CHO, Chunhum, SUNG KWAN LIM, HEO, Jinseong, CHUNG, Hyun-Jong, YANG, Heejun, SEO, Sunae

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Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations von Kim, Seonghyun, Park, Jubong, Jung, Seungjae, Lee, Wootae, Woo, Jiyong, Cho, Chunhum, Siddik, Manzar, Shin, Jungho, Park, Sangsu, Hun Lee, Byoung, Hwang, Hyunsang

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Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications von Yoon, Jaesik, Lee, Joonmyoung, Choi, Hyejung, Park, Ju-Bong, Seong, Dong-jun, Lee, Wootae, Cho, Chunhum, Kim, Seonghyun, Hwang, Hyunsang

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Graphene transfer in vacuum yielding a high quality graphene von Lee, Sangchul, Lee, Sang Kyung, Kang, Chang Goo, Cho, Chunhum, Lee, Young Gon, Jung, Ukjin, Lee, Byoung Hun

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Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes von Lee, Sangchul, Yeo, Jun-Seok, Ji, Yongsung, Cho, Chunhum, Kim, Dong-Yu, Na, Seok-In, Lee, Byoung Hun, Lee, Takhee

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Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method von Lee, Young Gon, Kang, Chang Goo, Cho, Chunhum, Kim, Yonghun, Hwang, Hyeon Jun, Lee, Byoung Hun

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Advantages of a buried-gate structure for graphene field-effect transistor von Lee, Sang Kyung, Kim, Yun Ji, Heo, Sunwoo, Park, Woojin, Yoo, Tae Jin, Cho, Chunhum, Hwang, Hyeon Jun, Lee, Byoung Hun

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Pulsed KrF laser-assisted direct deposition of graphitic capping layer for Cu interconnect von Cho, Chunhum, Lee, Sang Kyung, Yoo, Tae Jin, Heo, Sunwoo, Hwang, Hyeon Jun, Kang, Chang Goo, Ham, Moon-Ho, Lee, Byoung Hun

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Reduction of low-frequency noise in multilayer MoS2 FETs using a Fermi-level depinning layer von Kim, Yonghun, Park, Woojin, Yang, Jin Ho, Cho, Chunhum, Lee, Sang Kyung, Lee, Byoung Hun

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A graphene barristor using nitrogen profile controlled ZnO Schottky contactsElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr08829e von Hwang, Hyeon Jun, Chang, Kyoung Eun, Yoo, Won Beom, Shim, Chang Hoo, Lee, Sang Kyung, Yang, Jin Ho, Kim, So-Young, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

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