Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire von Chitnis, Ashay, Chen, Changqing, Adivarahan, Vinod, Shatalov, Maxim, Kuokstis, Edmundas, Mandavilli, Vasavi, Yang, Jinwei, Khan, M. Asif

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Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers von Pinos, Andrea, Tan, Wei-Sin, Chitnis, Ashay, Nishikawa, Atsushi, Groh, Lars, Hu, Cheng-Yu, Murad, Saad, Lutgen, Stephan

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Excellent uniformity on large diameter GaN on silicon LED wafer von Pinos, Andrea, Tan, Wei-Sin, Chitnis, Ashay, Nishikawa, Atsushi, Groh, Lars, Hu, Cheng-Yu, Murad, Saad, Lutgen, Stephan

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Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm von Adivarahan, Vinod, Zhang, Jianping, Chitnis, Ashay, Shuai, Wu, Sun, Jie, Pachipulusu, Radhika, Shatalov, Maxim, Khan, Muhammad Asif

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Micro-pixel Design Milliwatt Power 254 nm Emission Light Emitting Diodes von Wu, Shuai, Adivarahan, Vinod, Shatalov, Maxim, Chitnis, Ashay, Sun, Wen-Hong, Khan, M. Asif

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Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells von Khan, Muhammad Asif, Adivarahan, Vinod, Zhang, Jian Ping, Chen, Changqing, Kuokstis, Edmundas, Chitnis, Ashay, Shatalov, Maxim, Yang, Jin Wei, Simin, Grigory

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Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates von Shatalov, Maxim, Simin, Grigory, Adivarahan, Vinod, Chitnis, Ashay, Wu, Shuai, Pachipulusu, Radhika, Mandavilli, Vasavi, Simin, Kirill, Zhang, Jian Ping, Yang, Jin Wei, Khan, Muhammad Asif

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Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes von Zhang, Jian Ping, Adivarahan, Vinod, Wang, Hong Mei, Fareed, Qhalid, Kuokstis, Edmundas, Chitnis, Ashay, Shatalov, Maxim, Yang, Jin Wei, Simin, Grigory, Khan, Muhammad Asif, Shur, Michael, Gaska, Remis

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Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm von Shatalov, Maxim, Chitnis, Ashay, Koudymov, Alexey, Zhang, Jianping, Adivarahan, Vinod, Simin, Grigory, Khan, Muhammad Asif

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Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate von Chitnis, Ashay, Adivarahan, Vinod, Shatalov, Maxim, Zhang, Jianping, Gaevski, Michael, Shuai, Wu, Pachipulusu, Radhika, Sun, Jason, Simin, Kirill, Simin, Grigory, Yang, Jinwei, Khan, Muhammad Asif

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BULK ACOUSTIC DEVICE AND METHOD FOR FABRICATING von CHITNIS, Ashay

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GaN-on-Si wafers for HEMTs with high power-driving capability von Hu, Cheng-Yu, Murad, Saad, Nishikawa, Atsushi, Groh, Lars, Pinos, Andrea, Tan, Weisin, Chitnis, Ashay, Sizov, Victor, Yagi, Takuma, Lutgen, Stephan

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AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission von Zhang, JianPing, Wu, Shuai, Rai, Shiva, Mandavilli, Vasavi, Adivarahan, Vinod, Chitnis, Ashay, Shatalov, Maxim, Khan, Muhammad Asif

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P-doping of group-III-nitride buffer layer structure on a heterosubstrate von Murad, Saad, Lutgen, Stephan, Chitnis, Ashay

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BULK ACOUSTIC DEVICE AND METHOD FOR FABRICATING von CHITNIS, Ashay

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BULK ACOUSTIC DEVICE AND METHOD FOR FABRICATING von CHITNIS, Ashay

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Bulk acoustic device and method for fabricating von Chitnis, Ashay

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P-DOPING OF GROUP III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE von Murad, Saad, Lutgen, Stephan, Chitnis, Ashay

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Selective wet etching of gold-tin based solder von CHITNIS ASHAY

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P DOPING OF GROUP III NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE von Murad, Saad, Lutgen, Stephan, Chitnis, Ashay

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