Square-Gate AlGaN/GaN HEMTs With Improved Trap-Related Characteristics von Lin, Yu-Syuan, Wu, Jia-Yi, Chan, Chih-Yuan, Hsu, Shawn S. H., Huang, Chih-Fang, Lee, Ting-Chi

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Impact of STI Effect on Flicker Noise in 0.13-[mu]m RF nMOSFETs von Chan, Chih-Yuan, Lin, Yu-Syuan, Huang, Yen-Chun, Hsu, S.S.H., Juang, Ying-Zong

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Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors von Chan, Chih-Yuan, Lee, Ting-Chi, Hsu, Shawn S. H., Chen, Leaf, Lin, Yu-Syuan

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A Wide Locking-Range Frequency Divider for LMDS Applications von Hong-Yu Lin, Hsu, S.S.H., Chih-Yuan Chan, Jun-De Jin, Yu-Syuan Lin

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Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene von Lin, Yu-Chuan, Chang, Chih-Yuan S, Ghosh, Ram Krishna, Li, Jie, Zhu, Hui, Addou, Rafik, Diaconescu, Bogdan, Ohta, Taisuke, Peng, Xin, Lu, Ning, Kim, Moon J, Robinson, Jeremy T, Wallace, Robert M, Mayer, Theresa S, Datta, Suman, Li, Lain-Jong, Robinson, Joshua A

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Wiring Effect Optimization in 65-nm Low-Power NMOS von Chan, C.-Y., Chen, S.-C., Tsai, M.-H., Hsu, S.

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Impact of STI Effect on Flicker Noise in 0.13-μm RF nMOSFETs von CHAN, Chih-Yuan, LIN, Yu-Syuan, HUANG, Yen-Chun, HSU, Shawn S. H, JUANG, Ying-Zong

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Edge-extended Design for Improved Flicker Noise Characteristics in 0.13-μm RF NMOS von Chih-Yuan Chan, Yu-Syuan Lin, Yen-Chun Huang, Hsu, S.S.H., Ying-Zong Juang

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STI-to-gate distance effects on flicker noise characteristics in 0.13μm CMOS von Chan, Chih-Yuan, Huang, Yen-Chun, Chen, Jun-Wei, Hsu, Shawn S.H., Juang, Ying-Zong

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Impact of STI Effect on Flicker Noise in 0.13- \mu \hbox RF nMOSFETs von Chih-Yuan Chan, Yu-Syuan Lin, Yen-Chun Huang, Hsu, S.S.H., Ying-Zong Juang

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STI Effect on Flicker Noise in 0.13-μm RF NMOS von Chih-Yuan Chan, Jun-De Jin, Yu-Syuan Lin, Hsu, S.S.H., Ying-Zong Juane

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Substrate Coupling Effect under Various Noise Injection Topologies in LC-Voltage Controlled Oscillator von Shen-Sz Wang, Yu-Chen Wu, Hsu, S.S.H., Chin-Yuan Chan

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High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer von Lin, Yu-Syuan, Koa, Shun-Hau, Chan, Chih-Yuan, Hsu, Shawn S. H., Lee, Hong-Mao, Gwo, Shangjr

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Effect of Rapid Thermal Annealing on Sputtered CaCu3Ti4O12 Thin Films von Lin, Shih-Yuan, Chen, Ying-Chung, Wang, Chih-Ming, Kao, Kuo-Sheng, Chan, Chih-Yuan

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Effect of Rapid Thermal Annealing on Sputtered CaCu^sub 3^Ti^sub 4^O^sub 12^ Thin Films von Lin, Shih-Yuan, Chen, Ying-Chung, Wang, Chih-Ming, Kao, Kuo-Sheng, Chan, Chih-Yuan

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Effect of Rapid Thermal Annealing on Sputtered CaCusub 3 exp isub 4 sub sub 12 Thin Films von Lin, Shih-Yuan, Chen, Ying-Chung, Wang, Chih-Ming, Kao, Kuo-Sheng, Chan, Chih-Yuan

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Miniaturized semiconductor manufacturing system von Chan, Chih-Yuan, Wu, Hsueh-Hsien

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Square-Gate AIGaN/GaN HEMTs With Improved Trap-Related Characteristics von LIN, Yu-Syuan, WU, Jia-Yi, CHAN, Chih-Yuan, HSU, Shawn S. H, HUANG, Chih-Fang, LEE, Ting-Chi

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Miniaturized semiconductor manufacturing device von Chan, Chih-Yuan, Wu, Hsueh-Hsien

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High current density In N ∕ Al N heterojunction field-effect transistorwith a Si N x gate dielectric layer von Lin, Yu-Syuan, Koa, Shun-Hau, Chan, Chih-Yuan, Hsu, Shawn S. H., Lee, Hong-Mao, Gwo, Shangjr

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