Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications von Pitts, O.J., Lackner, D., Cherng, Y.T., Watkins, S.P.

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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers von Kuan, T.M., Chang, S.J., Su, Y.K., Lin, J.C., Wei, S.C., Wang, C.K., Huang, C.I., Lan, W.H., Bardwell, J.A., Tang, H., Lin, W.J., Cherng, Y.T.

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Photo-enhanced chemical wet etching of GaN von Ko, C.H., Su, Y.K., Chang, S.J., Lan, W.H., Webb, Jim, Tu, M.C., Cherng, Y.T.

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ZnSTeSe metal-semiconductor-metal photodetectors von Chang, S.J., Su, Y.K., Chen, W.R., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.

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Two-step epitaxial lateral overgrowth of GaN von Ko, C.H., Su, Y.K., Chang, S.J., Tsai, T.Y., Kuan, T.M., Lan, W.H., Lin, J.C., Lin, W.J., Cherng, Y.T., Webb, James B.

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Nitride-based 2DEG photodetectors with a large AC responsivity von Chang, S.J., Kuan, T.M., Ko, C.H., Su, Y.K., Webb, J.B., Bardwell, J.A., Liu, Y., Tang, H., Lin, W.J., Cherng, Y.T., Lan, W.H.

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Nitride-based HFETs with carrier confinement layers von Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

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ZnCdSeTe-based orange light-emitting diode von Chen, W.R., Chang, S.J., Su, Y.K., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.

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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching von Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

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Dark currents in HgCdTe photodiodes passivated with ZnS/CdS von JUANG, F. S, SU, Y. K, CHANG, S. J, CHANG, S. M, SHU, F. S, CHIANG, C. D, CHERNG, Y. T, SUN, T. P

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Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode von JUANG, F. S, SU, Y. K, CHANG, S. M, CHANG, S. J, CHIANG, C. D, CHERNG, Y. T

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Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films von Ke, W. C., Ku, C. S., Huang, H. Y., Chen, W. C., Lee, L., Chen, W. K., Chou, W. C., Chen, W. H., Lee, M. C., Lin, W. J., Cheng, Y. C., Cherng, Y. T.

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Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1-xSbx von JOU, M. J, CHERNG, Y. T, JEN, H. R, STRINGFELLOW, G. B

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InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations von Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., Krishna, S.

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InAsSb and InPSb materials for mid infrared photodetectors von Lackner, D, Pitts, O J, Martine, M, Cherng, Y T, Mooney, P M, Thewalt, M, Plis, E, Watkins, S P

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Effects of substrate preheating for the growth of ZnXCd1-XTe/(1 0 0)GaAs by MOCVD von SZE, P. W, WANG, N. F, HOUNG, M. P, WANG, Y. H, HWANG, J. S, CHOU, W. Y, CHERNG, Y. T, WANG, C. H, CHIANG, C. D

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High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA von Hsieh, C-C, Wu, C-Y, Sun, T-P, Jih, F-W, Cherng, Y-T

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Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD von Sze, P.W., Wang, N.F., Houng, M.P., Wang, Y.H., Cherng, Y.T., Wang, C.H.

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Raman scattering in InAs1-xSbx grown by organometallic vapor phase epitaxy von CHERNG, Y. T, MA, K. Y, STRINGFELLOW, G. B

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Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP1-xSbx von JOU, M. J, CHERNG, Y. T, STRINGFELLOW, G. B

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