Treffer 1 - 10 von 10 für Suche 'CHEONG SEONGHWEE', Suchdauer: 0,36s Treffer weiter einschränken
  1. 1
    Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate

    Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate von Cheong, Seonghwee, Song, Ohsung, Kim, Min-Sung


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  2. 2
    Property of Cobalt Nickel Silicide by Thermal Annealing of Co/Ni Bilayer on a Silicon Substrate

    Property of Cobalt Nickel Silicide by Thermal Annealing of Co/Ni Bilayer on a Silicon Substrate von Seong Hwee Cheong, Oh Sung Song, Min Sung Kim


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  3. 3
    Semiconductor devices including metal-silicon-nitride patterns

    Semiconductor devices including metal-silicon-nitride patterns von Kong Myung-Ho, Park Youngwook, Cheong Seonghwee, Kim Taekjung, Kang Mansug, Park Heesook

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  4. 4
    Semiconductor device with vertical channel transistor and method of fabricating the same

    Semiconductor device with vertical channel transistor and method of fabricating the same von CHOI GYUWAN, KANG MANSUG, KIM JOON, NAM KIHONG, CHEONG SEONGHWEE

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  5. 5
    Semiconductor Device With Vertical Channel Transistor And Method Of Fabricating The Same

    Semiconductor Device With Vertical Channel Transistor And Method Of Fabricating The Same von CHOI GYUWAN, KANG MANSUG, KIM JOON, NAM KIHONG, CHEONG SEONGHWEE

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  6. 6
    SEMICONDUCTOR DEVICES INCLUDING METAL-SILICON-NITRIDE PATTERNS

    SEMICONDUCTOR DEVICES INCLUDING METAL-SILICON-NITRIDE PATTERNS von KONG MYUNG-HO, PARK HEESOOK, KIM TAEKJUNG, PARK YOUNGWOOK, KANG MANSUG, CHEONG SEONGHWEE

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  7. 7
    Thermally Robust Ohmic Layer Formation and Stable Electrical Properties in TiCl 4 -Ti/TiN Process Using Cyclic Plasma Method

    Thermally Robust Ohmic Layer Formation and Stable Electrical Properties in TiCl 4 -Ti/TiN Process Using Cyclic Plasma Method von Cheong, Seonghwee, Lee, E.O., Park, H.S., Kang, M.S., Choi, G.Y., Kim, J., Nam, S.W., Kang, H.K.


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  8. 8
    Semiconductor devices including metal-silicon-nitride patterns

    Semiconductor devices including metal-silicon-nitride patterns von KONG MYUNG-HO, PARK HEESOOK, KIM TAEKJUNG, PARK YOUNGWOOK, KANG MANSUG, CHEONG SEONGHWEE

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  9. 9
    SEMICONDUCTOR DEVICE CAPACITORS INCLUDING MULTILAYERED LOWER ELECTRODES

    SEMICONDUCTOR DEVICE CAPACITORS INCLUDING MULTILAYERED LOWER ELECTRODES von PARK HEESOOK, KIM TAEKYUN, KANG MANSUG, PARK DONGKYUN, CHEONG SEONGHWEE

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  10. 10
    SEMICONDUCTOR DEVICES INCLUDING METAL-SILICON-NITRIDE PATTERNS AND METHODS OF FORMING THE SAME

    SEMICONDUCTOR DEVICES INCLUDING METAL-SILICON-NITRIDE PATTERNS AND METHODS OF FORMING THE SAME von KONG MYUNG-HO, PARK HEESOOK, KIM TAEKJUNG, PARK YOUNGWOOK, KANG MANSUG, CHEONG SEONGHWEE

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