Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer von Huang, Kuei-Wen, Cheng, Po-Hsien, Lin, Yu-Shu, Wang, Chin-I, Lin, Hsin-Chih, Chen, Miin-Jang

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Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform von Lin, Cheng‐Ming, Hsu, Chuang‐Han, Huang, Wei‐Yu, Astié, Vincent, Cheng, Po‐Hsien, Lin, Yue‐Min, Hu, Wei‐Shan, Chen, Szu‐Hua, Lin, Han‐Yu, Li, Ming‐Yang, Magyari‐Kope, Blanka, Yang, Chi‐Ming, Decams, Jean‐Manuel, Lee, Tzu‐Lih, Gui, Dong, Wang, Han, Woon, Wei‐Yen, Lin, Pinyen, Wu, Jeff, Lee, Jang‐Jung, Liao, Szuya Sandy, Cao, Min

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Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition von Cheng, Po-Hsien, Wang, Chun-Yuan, Chang, Teng-Jan, Shen, Tsung-Han, Cai, Yu-Syuan, Chen, Miin-Jang

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Negative capacitance from the inductance of ferroelectric switching von Cheng, Po-Hsien, Yin, Yu-Tung, Tsai, I-Na, Lu, Chen-Hsuan, Li, Lain-Jong, Pan, Samuel C., Shieh, Jay, Shiojiri, Makoto, Chen, Miin-Jang

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Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature von Lee, Wei-Hao, Yin, Yu-Tung, Cheng, Po-Hsien, Shyue, Jing-Jong, Shiojiri, Makoto, Lin, Hsin-Chih, Chen, Miin-Jang

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Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication von Yang, Po-Shuan, Cheng, Po-Hsien, Kao, C. Robert, Chen, Miin-Jang

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Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures von Tsai, Meng-Chen, Cheng, Po-Hsien, Lee, Min-Hung, Lin, Hsin-Chih, Chen, Miin-Jang

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Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization von Lin, Yu-Shu, Cheng, Po-Hsien, Huang, Kuei-Wen, Lin, Hsin-Chih, Chen, Miin-Jang

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Low-Temperature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronics von Cheng, Po-Hsien, Wang, Chin-I, Ling, Chen-Hsiang, Lu, Chen-Hsuan, Yin, Yu-Tung, Chen, Miin-Jang

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DEPOSITION APPARATUS AND METHOD WITH EM RADIATION von Cheng, Po-Hsien, Lee, Tze-Liang

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Deposition apparatus and method with EM radiation von Cheng, Po-Hsien, Lee, Tze-Liang

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Deposition Apparatus and Method with EM Radiation von Cheng, Po-Hsien, Lee, Tze-Liang

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Self-Aligned Interconnect Structures and Methods of Forming the Same von Cheng, Po-Hsien, Lee, Tze-Liang

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Deposition Apparatus and Method von Cheng, Po-Hsien, Lee, Tze-Liang

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CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE von CHENG, Po-Hsien, LEE, Tze-Liang, YANG, Chi-Ming

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FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS von YIN, Yu-tung, CHENG, Po-Hsien, CHEN, Miin-Jang

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SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME von CHENG, Po-Hsien, WU, Zhen-Cheng

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CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE von CHENG, Po-Hsien, LEE, Tze-Liang, YANG, Chi-Ming

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FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS von YIN, Yu-tung, CHENG, Po-Hsien, CHEN, Miin-Jang

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Isolation Layers for Reducing Leakages Between Contacts von Cheng, Po-Hsien, Shih, Po-Cheng, Lee, Tze-Liang

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