Harnessing microcomb-based parallel chaos for random number generation and optical decision making von Shen, Bitao, Shu, Haowen, Xie, Weiqiang, Chen, Ruixuan, Liu, Zhi, Ge, Zhangfeng, Zhang, Xuguang, Wang, Yimeng, Zhang, Yunhao, Cheng, Buwen, Yu, Shaohua, Chang, Lin, Wang, Xingjun

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GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy von Zheng, Jun, Wang, Suyuan, Liu, Zhi, Cong, Hui, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming

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GeSn p-i-n photodetector for all telecommunication bands detection von Su, Shaojian, Cheng, Buwen, Xue, Chunlai, Wang, Wei, Cao, Quan, Xue, Haiyun, Hu, Weixuan, Zhang, Guangze, Zuo, Yuhua, Wang, Qiming

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Multilayer Graphene–GeSn Quantum Well Heterostructure SWIR Light Source von Cong, Hui, Yang, Fan, Xue, Chunlai, Yu, Kai, Zhou, Lin, Wang, Nan, Cheng, Buwen, Wang, Qiming

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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA+U approach von Huang, Wenqi, Cheng, Buwen, Xue, Chunlai, Liu, Zhi

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Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy von Zheng, Jun, Liu, Zhi, Zhang, Yongwang, Zuo, Yuhua, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming

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Recent progress in GeSn growth and GeSn-based photonic devices von Zheng, Jun, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming

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48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth von Liu, Zhi, Yang, Fan, Wu, Wenzhou, Cong, Hui, Zheng, Jun, Li, Chuanbo, Xue, Chunlai, Cheng, Buwen, Wang, Qiming

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High-responsivity GeSn short-wave infrared p-i-n photodetectors von Zhang, Dongliang, Xue, Chunlai, Cheng, Buwen, Su, Shaojian, Liu, Zhi, Zhang, Xu, Zhang, Guangze, Li, Chuanbo, Wang, Qiming

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Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion von Tariq, Zeeshan, Rehman, Sajid Ur, Zhang, Xiaoming, Butt, Faheem K., Feng, Shuai, Haq, Bakhtiar Ul, Zheng, Jun, Cheng, Buwen, Li, Chuanbo

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Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn von Wang, Nan, Xue, Chunlai, Wan, Fengshuo, Zhao, Yue, Xu, Guoyin, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming

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Silicon Based GeSn p-i-n Photodetector for SWIR Detection von Cong, Hui, Xue, Chunlai, Zheng, Jun, Yang, Fan, Yu, Kai, Liu, Zhi, Zhang, Xu, Cheng, Buwen, Wang, Qiming

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Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals von Zhou, Lin, Liu, Taoran, Zheng, Jun, Yu, Kai, Yang, Fan, Wang, Nan, Zuo, Yuhua, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming

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GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing von Han, Genquan, Wang, Yibo, Liu, Yan, Zhang, Chunfu, Feng, Qian, Liu, Mingshan, Zhao, Shenglei, Cheng, Buwen, Zhang, Jincheng, Hao, Yue

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A new 3-dB bandwidth record of Ge photodiode on Si von Liu, Zhi, Li, Chuanbo, Cheng, Buwen

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Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate von Liu, Zhi, Li, Yaming, He, Chao, Li, Chuanbo, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming

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High-Performance GeSn Photodetector Covering All Telecommunication Bands von Wang, Nan, Xue, Chunlai, Wan, Fengshuo, Zhao, Yue, Xu, Guoyin, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming

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Double-shell-structured Si@SiOx@C composite material for long-life lithium-ion storage von Ma, Peipei, Zhang, Junying, Zheng, Jun, Cheng, Buwen, Zhang, Xiaoming, Li, Chuanbo

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Investigation of lead surface segregation during germanium–lead epitaxial growth von Liu, Xiangquan, Zheng, Jun, Li, Xiuli, Niu, Chaoqun, Peng, Linzhi, Wan, Fengshuo, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen

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Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect von Liu, Zhi, Liu, Jietao, Cheng, Buwen, Zheng, Jun, Li, Chuanbo, Xue, Chunlai, Wang, Qiming

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