Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device von Chen, Xinman, Hu, Wei, Li, Yan, Wu, Shuxiang, Bao, Dinghua

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Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device von Wang, Dongliang, Ji, Fengzhen, Chen, Xinman, Li, Yan, Ding, Baofu, Zhang, Yong

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Vanadium disulfide decorated graphitic carbon nitride for super-efficient solar-driven hydrogen evolution von Shao, Mengmeng, Shao, Yangfan, Ding, Shengjie, Wang, Jingwei, Xu, Jinchen, Qu, Yuanju, Zhong, Xiongwei, Chen, Xinman, Ip, Weng Fai, Wang, Ning, Xu, Baomin, Shi, Xingqiang, Wang, Xuesen, Pan, Hui

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Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method von Hu, Wei, Zou, Lilan, Chen, Xinman, Qin, Ni, Li, Shuwei, Bao, Dinghua

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Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current von Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua

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Resistive switching properties and physical mechanism of cobalt ferrite thin films von Hu, Wei, Zou, Lilan, Chen, Ruqi, Xie, Wei, Chen, Xinman, Qin, Ni, Li, Shuwei, Yang, Guowei, Bao, Dinghua

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Bidirectional photoresponse of graphdiyne/graphene heterojunction detector for optical logic gates von Chen, Yunkai, Huang, Zixi, Huang, Jianning, Shao, Libo, Gao, Fangliang, Chen, Xinman, Khisro, Said Nasir, Zhang, Yong

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Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO2/Pt Devices Dependent on the Electroforming Polarity von Li, Yan, Pan, Xuexue, Zhang, Yong, Chen, Xinman

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Facile Synthesis of NiMoO4 Nanorod Electrode for Aqueous Hybrid Supercapacitor with High Energy Density von Ji, Fengzhen, Pan, Xuexue, Qin, Juhua, Chen, Xinman, Zha, Qingbing

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High-performance graphene/n-Si hybrid photodetector toward self-driven optical communications von Huang, Jianning, Zhong, Zhijian, Jiang, Zhiguo, Gao, Fangliang, Zhang, Yong, Liu, Feng, Zhao, Yanliang, Khisro, Said Nasir, Chen, Xinman

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Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications von Chen, Xinman, Wu, Guangheng, Bao, Dinghua

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Hierarchical MnO2 nanosheets coated on MnCo2O4.5 nanoneedles as advanced electrode for high-efficient hybrid supercapacitor von He, Yunbing, Pan, Xuexue, Kuang, Liping, Hu, Bo, Zha, Qinbing, Chen, Xinman

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Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices von Hu, Wei, Chen, Xinman, Wu, Guangheng, Lin, Yanting, Qin, Ni, Bao, Dinghua

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A photoelectric synapse based on optimized perovskite CH3NH3PbBr3 quantum dot film detectors von Xia, Liping, Huang, Jianning, Zhou, E, Chen, Yunkai, Wen, Weikun, Zhang, Xiaonan, Gao, Fangliang, Wu, Jiang, Zhang, Yong, Khisro, Said Nasir, Zha, Qingbing, Ma, Xuefeng, Chen, Xinman

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Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates von Chen, Xinman, Zhang, Hu, Ruan, Kaibin, Shi, Wangzhou

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A multifunctional optoelectronic device based on 2D material with wide bandgap von Xu, Hongwei, Liu, Jingwei, Wei, Sheng, Luo, Jie, Gong, Rui, Tian, Siyuan, Yang, Yiqi, Lei, Yukun, Chen, Xinman, Wang, Jiahong, Zhong, Gaokuo, Tang, Yongbing, Wang, Feng, Cheng, Hui-Ming, Ding, Baofu

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Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films von Chen, Xinman, Zhao, Lingzhi, Niu, Qiaoli

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Colossal resistance switching effect in Pt/ spinel -MgZnO/Pt devices for nonvolatile memory applications von Chen, Xinman, Wu, Guangheng, Jiang, Peng, Liu, Weifang, Bao, Dinghua

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Study on Compliance and Practice of International Law and Remedies von Gong, Yingzhen, Chen, Xinman, Lin, Sicheng, Wu, Mingzhe

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Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices von Wu, Shuxiang, Chen, Xinman, Ren, Lizhu, Hu, Wei, Yu, Fengmei, Yang, Kungan, Yang, Mei, Wang, Yunjia, Meng, Meng, Zhou, Wenqi, Bao, Dinghua, Li, Shuwei

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