Simulation study of a fast speed trench Schottky rectifier with an isolated gate von Xu, Xianguo, Liu, Minqiang, Zeng, Chao, Chen, Wensuo

Volltext

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier von ZHANG, Peijian, ZHU, Kunfeng, CHEN, Wensuo

Volltext

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires von Xiong, Wen, Chen, Wensuo

Volltext

Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR) von Chen, Wensuo, Liao, Ruijin, Zeng, Zheng, Zhang, Peijian, Zhong, Yi, Tan, Kaizhou, Chen, Hao, Zhang, Bo

Volltext

Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode von Chen, Wensuo, Zhang, Bo, Li, Zhaoji

Volltext

A Novel Low VF Super Barrier Rectifier (SBR) With an N-Enhancement Layer von Wensuo Chen, Peijian Zhang, Yi Zhong, Kaizhou Tan, Ruijin Liao, Zheng Zeng, Bo Zhang

Volltext

Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar von Shen, Zhigang, Chen, Wensuo

Volltext

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs von Zhu, Kunfeng, Zhang, Peijian, Xu, Zicheng, Wang, Tao, Yi, Xiaohui, Hong, Min, Yang, Yonghui, Zhang, Guangsheng, Liu, Jian, Wei, Jianan, Pu, Yang, Huang, Dong, Luo, Ting, Chen, Xian, Tang, Xinyue, Tan, Kaizhou, Chen, Wensuo

Volltext

Reverse Recovery Enhanced and Single-Event Effects Hardened Power Schottky Source MOSFET With Integrated Retrograde p-Well Schottky Contact Super Barrier Rectifier von Yu, Qisheng, Chen, Wensuo, Zhang, Aohang, Huang, Jiaweiwen

Volltext

16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage von Yu, Qisheng, Huang, Jiaweiwen, Shen, Zhigang, Zhang, Aohang, Chen, Wensuo

Volltext

Flexible triboelectric 3D touch pad with unit subdivision structure for effective XY positioning and pressure sensing von Pu, Xianjie, Tang, Qian, Chen, Wensuo, Huang, Zhengyong, Liu, Guanlin, Zeng, Qixuan, Chen, Jie, Guo, Hengyu, Xin, Liming, Hu, Chenguo

Volltext

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier von Zhang, Peijian, Zhu, Kunfeng, Chen, Wensuo

Volltext

A transient-enhanced output-capacitorless LDO regulator with non-inverting pull–push gain stage von Shu, Hang, Liao, Pengfei, Peng, Haiqing, Chen, Wensuo

Volltext

A Simulation-Based Study on Integration of Si/SiGe Heterojunction Diode in Retrograde p-Well Schottky Source MOSFET for Single-Event Effects Hardening and Reverse Recovery Enhancem... von Yu, Qisheng, Chen, Wensuo, Zhang, Aohang, Huang, Jiaweiwen, Shen, Zhigang, Li, Jian

Volltext

Comprehensive experimental study on Schottky contact super barrier rectifier von Yu, Qisheng, Zhang, Zhengyuan, Zhang, Aohang, Huang, Jiaweiwen, Chen, Wensuo

Volltext

Total Ionizing Dose Radiation Damage to the Schottky Contact Super Barrier Rectifier von Zhang, Aohang, Chen, Wensuo, Huang, Jiaweiwen, Yu, Qisheng, Shen, Zhigang, Zhu, Kunfeng, Zhang, Peijian, Li, Jian

Volltext

Changes and challenges of photovoltaic inverter with silicon carbide device von Zeng, Zheng, Shao, Weihua, Chen, Hao, Hu, Borong, Chen, Wensuo, Li, Hui, Ran, Li

Volltext

Study on Novel Schottky Contact Super Barrier Rectifier with Deep Isolated MOS Trench in Epitaxial N-Drift Layer von Zhu, Kunfeng, Chen, Wensuo, Huang, Jiaweiwen, Yu, Qisheng, Li, Jian

Volltext

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance von Huang, Jiaweiwen, Chen, Wensuo, Zhao, Shenglei, Yu, Qisheng, Zhang, Aohang, Zhu, Kunfeng, Li, Jian

Volltext

Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position von Wang, Yuying, Zhang, Zhengyuan, Jian, Peng, Liao, Pengfei, Zhang, Aohang, Zhu, Kunfeng, Chen, Wensuo

Volltext