PD-L1+ neutrophils induced NETs in malignant ascites is a potential biomarker in HCC von Sun, Xiaoyu, Gui, Yaoqi, Yang, Tai, Chen, Lingbing, Zhang, Yi, Yan, Ling, Chen, Weixian, Wang, Bo

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CD95-CD95L interaction mediates the growth control of MHV68 immortalized B cells by cytotoxic T cells von Dong, Sihan, Tan, Lingbing, Chen, Guifang, Liang, Xiaozhen

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Integrated planar-trench gate power MOSFET von Wang, Jian, Chen, Lingbing, Guan, Lingpeng, Li, Wenjun

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Gas dopant doped deep trench super junction high voltage MOSFET von Wang, Jian, Chen, Lingbing, Guan, Lingpeng, Li, Wenjun

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INTEGRATED PLANAR-TRENCH GATE POWER MOSFET von Wang, Jian, Chen, Lingbing, Guan, Lingpeng, Li, Wenjun

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GAS DOPANT DOPED DEEP TRENCH SUPER JUNCTION HIGH VOLTAGE MOSFET von Wang, Jian, Chen, Lingbing, Guan, Lingpeng, Li, Wenjun

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A study on multiple photon-gated persistent spectral hole burning and photoproduct in a system of frequency-domain storage material von Zhao, Youyuan, Pan, Yongle, Yin, Yu, Chen, Lingbing, Wang, Ruisheng, Li, Fuming, Yao, Shaoming, Zhang, Manhua

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Spectroscopic study on ZnTBP/CA/PhR film by photon-gated hole burning von Chen, Lingbing, Li, Jianzhao, Zhao, Youyuan, Li, Fuming, Zhang, Manhua, Yao, Shaoming

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Semiconductor device incorporating epitaxial layer field stop zone von Bobde, Madhur, Padmanabhan, Karthik, Wang, Jian, Chen, Lingbing, Xue, Hongyong, Aarts, Wim, Zhang, Lei, Guan, Lingpeng, Li, Wenjun

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Persistent Spectral Hole Burning of Eu^3＋ Doped Y2SiO5 Crystal at 579.62 nm von Xue Shaolin Chen Lingbing Zhao Youyuan Li Fuming Zhang Shoudu Huang Haobing

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High resolution photofragment spectroscopy of the gas phase methyl iodide ion von CHEN LINGBING, FIGGER, H, QUINT, W

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Structure of cleaning machine von CHEN LINGBING

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Light material metering device and batching system von ZHENG SHILEI, HUANG JUNHAO, CHEN LINGBING, LIU YAFU, XIE JUN

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Auxiliary boring machine machining device and boring machine von CHEN LINGBING, HU LI

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Method for monitoring epitaxial growth geometry shift von Chen Lingbing, Cai Boxiu, Gu Yiming

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SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE von Bobde, Madhur, Padmanabhan, Karthik, Wang, Jian, Chen, Lingbing, Xue, Hongyong, Aarts, Wim, Zhang, Lei, Guan, Lingpeng, Li, Wenjun

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Semiconductor device incorporating epitaxial layer field stop zone von Bobde, Madhur, Padmanabhan, Karthik, Wang, Jian, Chen, Lingbing, Xue, Hongyong, Aarts, Wim, Zhang, Lei, Guan, Lingpeng, Li, Wenjun

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Integrated planar-trench gate power mosfet von GUAN, LINGPENG, WANG, JIAN, LI, WENJUN, CHEN, LINGBING

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Gas dopant doped deep trench super junction high voltage mosfet von GUAN, LINGPENG, WANG, JIAN, LI, WENJUN, CHEN, LINGBING

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Integrated planar-trench gate power MOSFET von GUAN, LINGPENG, WANG, JIAN, LI, WENJUN, CHEN, LINGBING

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