Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED von Lu, Shiqiang, Luo, Zongyan, Li, Jinchai, Lin, Wei, Chen, Hangyang, Liu, Dayi, Cai, Duanjun, Huang, Kai, Gao, Na, Zhou, Yinghui, Li, Shuping, Kang, Junyong

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Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping von Si, Qianying, Chen, Hangyang, Li, Shuping, Lu, Shiqiang, Kang, Junyong

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Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer von Luo, Zongyan, Lu, Shiqiang, Li, Jinchai, Wang, Chuanjia, Chen, Hangyang, Liu, Dayi, Lin, Wei, Yang, Xu, Kang, Junyong

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Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair von Chen, Xiaohong, Xu, Hongmei, Lin, Na, Xu, Fuchun, Chen, Hangyang, Cai, Duanjun, Kang, Junyong

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Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth von Chen, Li, Lin, Wei, Chen, Hangyang, Xu, Houqiang, Guo, Chenyu, Liu, Zhibin, Yan, Jianchang, Sun, Jie, Liu, Huan, Wu, Jason, Guo, Wei, Kang, Junyong, Ye, Jichun

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Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs von Yang, Weihuang, Li, Jinchai, Lin, Wei, Li, Shuping, Chen, Hangyang, Liu, Dayi, Yang, Xu, Kang, Junyong

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Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units von Gao, Na, Feng, Xiang, Lu, Shiqiang, Lin, Wei, Zhuang, Qinqin, Chen, Hangyang, Huang, Kai, Li, Shuping, Kang, Junyong

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Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping von Lu, Shiqiang, Zheng, Tongchang, Jiang, Ke, Sun, Xiaojuan, Li, Dabing, Chen, Hangyang, Li, Jinchai, Zhou, Yinghui, Cai, Duanjun, Li, Shuping, Lin, Wei, Kang, Junyong

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Structural and thermal property changes of plasticized spinning polyacrylonitrile fibers under different spinning speeds von Li, Xiang, Li, Zhaoling, Dang, Xiaonan, Luan, Dan, Wang, Feng, Chen, Hangyang, Wang, Chentao

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Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm von Gao, Na, Chen, Junxin, Feng, Xiang, Lu, Shiqiang, Lin, Wei, Li, Jinchai, Chen, Hangyang, Huang, Kai, Kang, Junyong

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Design and epitaxy of structural III-nitrides von Li, Jinchai, Lin, Wei, Yang, Weihuang, Cai, Weizhi, Pan, Qunfeng, Lin, Xuejiao, Li, Shuping, Chen, Hangyang, Liu, Dayi, Cai, Jiafa, Yu, Xin, Kang, Junyong

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Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes von Chen, Li, Sun, Jie, Guo, Wei, Hoo, Jason, Lin, Wei, Chen, Hangyang, Xu, Houqiang, Yan, Long, Guo, Shiping, Kang, Junyong, Ye, Jichun

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High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability von Yang, Weihuang, Li, Jinchai, Zhang, Yong, Huang, Po-Kai, Lu, Tien-Chang, Kuo, Hao-Chung, Li, Shuping, Yang, Xu, Chen, Hangyang, Liu, Dayi, Kang, Junyong

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Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg-Si codoping pair by MOCVD von Soomro, Abdul Majid, Wu, Chenping, Lin, Na, Zheng, Tongchang, Wang, Huachun, Chen, Hangyang, Li, Jinchai, Li, Shuping, Cai, Duanjun, Kang, Junyong

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X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1−xN/GaN superlattice structures von Wang, Yuanzhang (元樟 王), Li, Jinchai (金钗 李), Li, Shuping (书平 李), Chen, Hangyang (航洋 陈), Liu, Dayi (达艺 刘), Kang, Junyong (俊勇 康)

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Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection von Gao, Na, Lin, Wei, Chen, Xue, Huang, Kai, Li, Shuping, Li, Jinchai, Chen, Hangyang, Yang, Xu, Ji, Li, Yu, Edward T, Kang, Junyong

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Defect Suppression in AlN Epilayer Using Hierarchical Growth Units von Zhuang, Qinqin, Lin, Wei, Yang, Weihuang, Yang, Wencao, Huang, ChengCheng, Li, Jinchai, Chen, HangYang, Li, Shuping, Kang, Junyong

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High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions von Zheng, Tongchang, Lin, Wei, Cai, Duanjun, Yang, Weihuang, Jiang, Wei, Chen, Hangyang, Li, Jinchai, Li, Shuping, Kang, Junyong

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Symmetrically abrupt GaN/AlGaN superlattices by alternative interface–interruption scheme von Chen, Xiaohong, Lin, Na, Cai, Duanjun, Zhang, Yong, Chen, Hangyang, Kang, Junyong

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Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1−xN/AlyGa1−yN superlattices von Li, Jinchai, Yang, Weihuang, Li, Shuping, Chen, Hangyang, Liu, Dayi, Kang, Junyong

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