Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays von Cai, Qing, You, Haifan, Guo, Hui, Wang, Jin, Liu, Bin, Xie, Zili, Chen, Dunjun, Lu, Hai, Zheng, Youdou, Zhang, Rong

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Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity von Li, Wenxin, Wang, Yifu, Gu, Guangyang, Ren, Fangfang, Zhou, Dong, Xu, Weizong, Zhou, Feng, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias von Peng, Yanghu, Guo, Hui, Gong, Ruiling, Liu, Huaize, Shao, Pengfei, Sun, Na, Ren, Fangfang, Ye, Jiandong, Zheng, Youdou, Lu, Hai, Zhang, Rong, Chen, Dunjun

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On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors von Yan, Dawei, Lu, Hai, Cao, Dongsheng, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy von Li, Siqi, Liang, Xiao, Shao, Pengfei, Chen, Songlin, Li, Zhenhua, Su, Xujun, Tao, Tao, Xie, Zili, Khan, M. Ajmal, Wang, Li, Lin, T. T., Hirayama, Hideki, Liu, Bin, Chen, Dunjun, Wang, Ke, Zhang, Rong

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RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs von Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Ren, Fang-fang, Chen, Dunjun, Ou, Xin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Gu, Shulin, Zhang, Rong, Zheng, Youdou, Ye, Jiandong

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Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure von Cao, Jiying, Cai, Qing, You, Haifan, Shao, Pengfei, Wang, Jin, Guo, Hui, Xue, Junjun, Liu, Bin, Xie, Zili, Cao, Xun, Lu, Hai, Zheng, Youdou, Zhang, Rong, Chen, Dunjun

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High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures von Shao, Pengfei, Fan, Xing, Li, Siqi, Chen, Songlin, Zhou, Hui, Liu, Huan, Guo, Hui, Xu, Weizong, Tao, Tao, Xie, Zili, Lu, Hong, Wang, Ke, Liu, Bin, Chen, Dunjun, Zheng, Youdou, Zhang, Rong

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Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors von Dai, Jiangping, Gao, Wang, Liu, Bin, Cao, Xianlei, Tao, Tao, Xie, Zili, Zhao, Hong, Chen, Dunjun, Ping, Han, Zhang, Rong

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Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode von Yang, Sen, Zhou, Dong, Cai, Xiaolong, Xu, Weizong, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou, Wang, Ruiqi

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High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design von Huang, Yi, Li, Jinpeng, Chen, Weizhong, Wang, Jin, Xue, Junjun, Cai, Qing, Chen, Dunjun, Zhang, Rong

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Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate von Xie, Feng, Lu, Hai, Xiu, Xiangqian, Chen, Dunjun, Han, Ping, Zhang, Rong, Zheng, Youdou

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High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates von Wang, Guosheng, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou

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Spatial Non-Uniform Hot Carrier Luminescence From 4H-SiC p-i-n Avalanche Photodiodes von Su, Linlin, Cai, Xiaolong, Lu, Hai, Zhou, Dong, Xu, Weizong, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou, Li, Guanglei

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Vertical 4H-SiC n-i-p-n APDs With Partial Trench Isolation von Cai, Xiaolong, Li, Lianghui, Lu, Hai, Zhou, Dong, Xu, Weizong, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou, Li, Guanglei

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Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Temperature Applications von Xie, Feng, Lu, Hai, Chen, Dunjun, Ji, Xiaoli, Yan, Feng, Zhang, Rong, Zheng, Youdou, Li, Liang, Zhou, Jianjun

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Stable pH sensitivity of LaAlO3/SrTiO3 interfacial electronic gas von Dong, Yan, Zhang, Lunyong, Li, Chen, Liu, Yanli, Shao, Pengfei, Lei, Jianming, Wang, Rui, Wu, Di, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation von Li, Lianghui, Zhou, Dong, Liu, Fei, Lu, Hai, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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High Performance Wide Angle DBR Design for Optoelectronic Devices von Zhi, Ting, Tao, Tao, Liu, Bin, Yan, Yu, Xie, Zili, Zhao, Hong, Chen, Dunjun

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4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation von Yang, Sen, Zhou, Dong, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou

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