Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers von Chen, Baile

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Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy von Chen, Jiaxiang, Huang, Wei, Qu, Haolan, Zhang, Yu, Zhou, Jianjun, Chen, Baile, Zou, Xinbo

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Design of InP-Based High-Speed Photodiode for 2- \mu m Wavelength Application von Chen, Yaojiang, Chen, Baile

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Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector von Xu, Kaimin, Xiao, Xiongbin, Zhou, Wenjia, Jiang, Xianyuan, Wei, Qi, Chen, Hao, Deng, Zhuo, Huang, Jian, Chen, Baile, Ning, Zhijun

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Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate von Huang, Jian, Guo, Daqian, Deng, Zhuo, Chen, Wei, Liu, Huiyun, Wu, Jiang, Chen, Baile

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Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy von Yao, Jinshan, Pan, Rui, Wang, Wenyang, Li, Chen, Chen, Baile, Lu, Hong, Chen, Yan-Feng

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Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications von Chen, Baile, Chen, Yaojiang, Deng, Zhuo

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Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector von Liang, Wang, Liqi, Zhu, Zhicheng, Xu, Fangfang, Wang, Jianxin, Chen, Baile, Chen

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Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate von Wei Chen, Zhuo Deng, Daqian Guo, Yaojiang Chen, Mazur, Yuriy I., Maidaniuk, Yurii, Benamara, Mourad, Salamo, Gregory J., Huiyun Liu, Jiang Wu, Baile Chen

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Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate von Deng, Zhuo, Guo, Daqian, Huang, Jian, Liu, Huiyun, Wu, Jiang, Chen, Baile

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Sub-monolayer quantum dot quantum cascade mid-infrared photodetector von Huang, Jian, Guo, Daqian, Chen, Wei, Deng, Zhuo, Bai, Yinghao, Wu, Tinghui, Chen, Yaojiang, Liu, Huiyun, Wu, Jiang, Chen, Baile

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Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy von Zhao, Yinan, Lu, Kechao, Yao, Jinshan, Ning, Jiqiang, Chen, Baile, Lu, Hong, Zheng, Changcheng

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Single-pixel p-graded-n junction spectrometers von Wang, Jingyi, Pan, Beibei, Wang, Zi, Zhang, Jiakai, Zhou, Zhiqi, Yao, Lu, Wu, Yanan, Ren, Wuwei, Wang, Jianyu, Ji, Haiming, Yu, Jingyi, Chen, Baile

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Equivalent Circuit Model of the RF Characteristics of Multi-Stage Infrared Photodetectors von Chen, Baile

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Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate von Shen, Zhijian, Deng, Zhuo, Zhao, Xuyi, Huang, Jian, Cao, Chunfang, Zou, Xinbo, Liu, Fengyu, Gong, Qian, Chen, Baile

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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si von Chen, Baile, Wan, Yating, Xie, Zhiyang, Huang, Jian, Zhang, Ningtao, Shang, Chen, Norman, Justin, Li, Qiang, Tong, Yeyu, Lau, Kei May, Gossard, Arthur C, Bowers, John E

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Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers von Chen, Baile

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Design and Fabrication of High Performance InGaAs near Infrared Photodetector von Liu, Hezhuang, Wang, Jingyi, Guo, Daqian, Shen, Kai, Chen, Baile, Wu, Jiang

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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD von Hao, Xiujun, Teng, Yan, Zhu, He, Liu, Jiafeng, Zhu, Hong, Huai, Yunlong, Li, Meng, Chen, Baile, Huang, Yong, Yang, Hui

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Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates von González Burguete, Claudia, Guo, Daqian, Jurczak, Pamela, Cui, Fan, Tang, Mingchu, Chen, Wei, Deng, Zhuo, Chen, Yaojiang, Gutiérrez, Marina, Chen, Baile, Liu, Huiyun, Wu, Jiang

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