On the Interface Design of Si and Multilayer Graphene for a High-Performance Li-Ion Battery Anode von Han, Xiang, Zhang, Ziqi, Chen, Huixin, Zhang, Qiaobao, Chen, Songyan, Yang, Yong

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Monolithically Integrated Self-Charging Power Pack Consisting of a Silicon Nanowire Array/Conductive Polymer Hybrid Solar Cell and a Laser-Scribed Graphene Supercapacitor von Liu, Hanhui, Li, Mengping, Kaner, Richard B, Chen, Songyan, Pei, Qibing

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Interfacial nitrogen engineering of robust silicon/MXene anode toward high energy solid-state lithium-ion batteries von Han, Xiang, Zhou, Weijun, Chen, Minfeng, Chen, Jizhang, Wang, Guanwen, Liu, Bo, Luo, Linshan, Chen, Songyan, Zhang, Qiaobao, Shi, Siqi, Wong, Ching-Ping

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Bulk boron doping and surface carbon coating enabling fast-charging and stable Si anodes: from thin film to thick Si electrodes von Han, Xiang, Zhang, Ziqi, Chen, Huixin, Luo, Linshan, Zhang, Qiaobao, Chen, Jizhang, Chen, Songyan, Yang, Yong

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Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing von Cai, Hongjie, Qian, Kun, An, Yuying, Lin, Guangyang, Wu, Songsong, Ding, Haokun, Huang, Wei, Chen, Songyan, Wang, Jianyuan, Li, Cheng

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Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing von Lin, Guangyang, Qian, Kun, Cai, Hongjie, Zhao, Haochen, Xu, Jianfang, Chen, Songyan, Li, Cheng, Hickey, Ryan, Kolodzey, James, Zeng, Yuping

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A Peanut Shell Inspired Scalable Synthesis of Three-Dimensional Carbon Coated Porous Silicon Particles as an Anode for Lithium-Ion Batteries von Han, Xiang, Chen, Huixin, Liu, Jingjing, Liu, Hanhui, Wang, Peng, Huang, Kai, Li, Cheng, Chen, Songyan, Yang, Yong

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Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors von Huang, Zhiwei, Mao, Yichen, Lin, Guangyang, Yi, Xiaohui, Chang, Ailing, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan

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Resistive switching properties in polycrystalline LiNbO3 thin films von Chen, Gongying, Zeng, Chao, Liao, Ye, Huang, Wei, Wang, Jianyuan, Lin, Guangyang, Li, Cheng, Chen, Songyan

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Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding von Ke, Shaoying, Ye, Yujie, Wu, Jinyong, Lin, Shaoming, Huang, Wei, Li, Cheng, Chen, Songyan

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P–i–n photodetector with active GePb layer grown by sputtering epitaxy von Yu, Jiulong, Lin, Guangyang, Xia, Shilong, Huang, Wei, Yang, Tianwei, Jiao, Jinlong, Liu, Xiangquan, Chen, Songyan, Li, Cheng, Zheng, Jun, Li, Jun

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Epitaxial Growth of Germanium on Silicon for Light Emitters von Li, Cheng, Chen, Chengzhao, Huang, Shihao, Zheng, Yuanyu, Lai, Hongkai, Chen, Songyan

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Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing von Zhang, Lu, Hong, Haiyang, Yu, Chunyu, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan, Wang, Hao

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High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode von Huang, Zhiwei, Ke, Shaoying, Zhou, Jinrong, Zhao, Yimo, Huang, Wei, Chen, Songyan, Li, Cheng

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The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition von Zhou, Zhiwen, Li, Cheng, Lai, Hongkai, Chen, Songyan, Yu, Jinzhong

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Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing von Wang, Chen, Li, Cheng, Lin, Guangyang, Lu, Weifang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan, Di, Zengfeng, Zhang, Miao

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Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection von Huang, Zhiwei, Mao, Yichen, Chang, Ailing, Hong, Haiyang, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan

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Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode von Ke, Shaoying, Lin, Shaoming, Mao, Danfeng, Ji, Xiaoli, Huang, Wei, Xu, Jianfang, Li, Cheng, Chen, Songyan

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Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature von Lin, Guangyang, Wang, Chen, Li, Cheng, Chen, Chaowen, Huang, Zhiwei, Huang, Wei, Chen, Songyan, Lai, Hongkai, Jin, Chunyan, Sun, Jiaming

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Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness von Wu, Zheng, Huang, Wei, Li, Cheng, Lai, Hongkai, Chen, Songyan

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