System, apparatus and method for detecting bone defects von LEE, SHYHYUAN, CHEN, CHINSUNG, CHIA, TAISHIN, PAN, MINCHUN

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The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors von Passlack, Matthias, Tasneem, Nujhat, Park, Chinsung, Ravindran, Prasanna Venkat, Chen, Hang, Das, Dipjyoti, Yu, Shimeng, Chen, Edward, Wang, Jer-Fu, Chang, Chih-Sheng, Lin, Yu-Ming, Radu, Iuliana, Khan, Asif

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A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage von Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, Khan, Asif

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Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications von Fernandes, Lance, Venkatesan Ravindran, Prasanna, Song, Taeyoung, Das, Dipjyoti, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

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Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications von Venkatesan, Prasanna, Park, Chinsung, Song, Taeyoung, Fernandes, Lance, Das, Dipjyoti, Afroze, Nashrah, Gundlapudi Ravikumar, Priyankka, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Mahapatra, Souvik, Yu, Shimeng, Datta, Suman, Khan, Asif

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Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors von Park, Chinsung, Ravindran, Prasanna Venkat, Das, Dipjyoti, Ravikumar, Priyankka Gundlapudi, Zhang, Chengyang, Afroze, Nashrah, Fernandes, Lance, Kuo, Yu Hsin, Hur, Jae, Chen, Hang, Tian, Mengkun, Chern, Winston, Yu, Shimeng, Khan, Asif Islam

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Demonstration of Robust Retention in Band engineered FEFETs for NAND Storage Applications using Tunnel Dielectric Layer von Venkatesan, Prasanna, Fernandes, Lance, Ravikumar, Priyankka, Park, Chinsung, Tran, Huy, Wang, Zekai, Jayasankar, Hari, Garlapati, Amrit, Song, Taeyoung, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Yu, Shimeng, Datta, Suman, Kim, Wanki, Ha, Daewon, Khan, Asif

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Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures von Tasneem, Nujhat, Kashyap, Harshil, Chae, Kisung, Park, Chinsung, Lee, Ping-che, Lombardo, Sarah F, Afroze, Nashrah, Tian, Mengkun, Kumarasubramanian, Harish, Hur, Jae, Chen, Hang, Chern, Winston, Yu, Shimeng, Bandaru, Prabhakar, Ravichandran, Jayakanth, Cho, Kyeongjae, Kacher, Josh, Kummel, Andrew C., Khan, Asif Islam

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Host command execution acceleration method and system von LEE CHINSUNG, CHEN HONGCHING, CHENG CHIHYUNG

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Comparison of strontium-induced and oxygen-induced holes in La2CuO4 von Chen, CY, Branlund, EC, Bae, C, Yang, K, Kastner, MA, Cassanho, A, Birgeneau, RJ

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Comparison of strontium-induced and oxygen-induced holes in La 2 CuO 4 von Chen, C. Y., Branlund, E. C., Bae, ChinSung, Yang, K., Kastner, M. A., Cassanho, A., Birgeneau, R. J.

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