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  1. 1
    A NOVEL P-CHANNEL FLASH MEMORY DEVICE

    A NOVEL P-CHANNEL FLASH MEMORY DEVICE von CHANGLIAO, KUEISHU, WANG, CHICHAO

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  2. 2
    Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes

    Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes von KUEI-SHU, CHANG-LIAO, JENN-GWO HWU


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