Enhanced Carrier Transport Performance of Monolayer Hafnium Disulphide by Strain Engineering von Chung, Yun-Fang, Chang, Shu-Tong

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First-Principles Study of the Optical Properties of TMDC/Graphene Heterostructures von Yang, Cheng-Hsien, Chang, Shu-Tong

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Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates von Liu, An-Chen, Chen, Pei-Tien, Chuang, Chia-Hao, Chen, Yan-Chieh, Chen, Yan-Lin, Chen, Hsin-Chu, Chang, Shu-Tong, Huang, I-Yu, Kuo, Hao-Chung

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Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs von Chen, Kuan-Ting, Chou, Yu-Chen, Siang, Gao-Yu, Chen, Hong-Yu, Lo, Chieh, Liao, Chun-Yu, Chang, Shu-Tong, Lee, Min-Hung

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Numerical Simulation on the Photovoltaic Behavior of an Amorphous-Silicon Nanowire-Array Solar Cell von ZINGWAY PEI, CHANG, Shu-Tong, LIU, Chang-Wei, CHEN, Yi-Chan

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Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) von Chen, Kuan-Ting, Lo, Chieh, Chen, Pin-Guang, Liao, M.-H., Li, Kai-Shin, Chang, Shu-Tong, Lee, Min-Hung, Gu, Siang-Sheng, Wang, Zheng-Ying, Liao, Chun-Yu, Chou, Yu-Chen, Hong, Ruo-Chun, Chen, Shih-Yao, Chen, Hong-Yu, Siang, Gao-Yu

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Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors von PENG, Cheng-Yi, YANG, Ying-Jhe, FU, Yen-Chun, HUANG, Ching-Fang, CHANG, Shu-Tong, CHEE WEE LIU

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A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors von Huang, Ting-Hsiang, Liu, Kou-Chen, Pei, Zingway, Lin, Wen-Kai, Chang, Shu-Tong

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How high can the mobility of monolayer tungsten disulfide be? von Chen, Kuan-Ting, Chang, Shu-Tong

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Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction von Huang, Ting-Hsiang, Pei, Zingway, Lin, Wen-Kai, Chang, Shu-Tong, Liu, Kou-Chen

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Strain Effect and Surface Orientation on Drive Current Enhancement of Ballistic Germanium n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors von Chang, Shu-Tong

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Correlating the Density of Trap-States and the Field-Effect Performance in Metal-Oxide Thin-Film Transistors With High- \kappa Gate Dielectrics via a Trap-Limited Conduction Method von Januar, Mochamad, Cheng, Chun-Wen, Lin, Wen-Kai, Vito, Vito, Wu, Meng-Chyi, Chang, Shu-Tong, Liu, Kou-Chen

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Band structure of molybdenum disulfide: from first principle to analytical band model von Yang, Cheng-Hsien, Chung, Yun-Fang, Su, Yen-Shuo, Chen, Kuan-Ting, Huang, Yi-Sheng, Chang, Shu-Tong

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Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors von Lee, Chia-Feng, He, Ren-Yu, Chen, Kuan-Ting, Cheng, Shu-Ying, Chang, Shu-Tong

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Compact conduction band model for transition-metal dichalcogenide alloys von Chen, Kuan-Ting, He, Ren-Yu, Lee, Chia-Feng, Wu, Ming-Ting, Chang, Shu-Tong

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Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates von Liao, Shu-Hui, Chang, Shu-Tong

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Electron and Hole Mobilities in Orthorhombically Strained Silicon von Chang, Shu-Tong

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Nanoscale Strained Si/SiGe Heterojunction Trigate Field Effect Transistors von Chang, Shu-Tong

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Subband structure and effective mass of relaxed and strained Ge (1 1 0) PMOSFETs von Hsieh, Bing-Fong, Chang, Shu-Tong

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Effect of layout arrangements on strained n-type metal-oxide-semiconductor field-effect transistors with silicon–carbon stressor von Lee, Chang-Chun, Chang, Shu-Tong, Hsieh, Bing-Fong

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