Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode von Kang, Jang-Won, Choi, Yong-Seok, Kim, Byeong-Hyeok, Goo Kang, Chang, Hun Lee, Byoung, Tu, C. W., Park, Seong-Ju

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Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene von Goo Kang, Chang, Kyung Lee, Sang, Jin Yoo, Tae, Park, Woojin, Jung, Ukjin, Ahn, Jinho, Hun Lee, Byoung

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Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method von Jung, Ukjin, Gon Lee, Young, Goo Kang, Chang, Lee, Sangchul, Hun Lee, Byoung

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Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 von Cho, Byungjin, Hahm, Myung Gwan, Choi, Minseok, Yoon, Jongwon, Kim, Ah Ra, Lee, Young-Joo, Park, Sung-Gyu, Kwon, Jung-Dae, Kim, Chang Su, Song, Myungkwan, Jeong, Yongsoo, Nam, Kee-Seok, Lee, Sangchul, Yoo, Tae Jin, Kang, Chang Goo, Lee, Byoung Hun, Ko, Heung Cho, Ajayan, Pulickel M., Kim, Dong-Ho

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Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO von Hwang, Dae-Kue, Oh, Min-Suk, Lim, Jae-Hong, Kang, Chang-Goo, Park, Seong-Ju

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Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2 von Cho, Byungjin, Kim, Ah Ra, Park, Youngjin, Yoon, Jongwon, Lee, Young-Joo, Lee, Sangchul, Yoo, Tae Jin, Kang, Chang Goo, Lee, Byoung Hun, Ko, Heung Cho, Kim, Dong-Ho, Hahm, Myung Gwan

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Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method von Lee, Young Gon, Kang, Chang Goo, Cho, Chunhum, Kim, Yonghun, Hwang, Hyeon Jun, Lee, Byoung Hun

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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics von Lee, Young Gon, Kang, Chang Goo, Jung, Uk Jin, Kim, Jin Ju, Hwang, Hyeon Jun, Chung, Hyun-Jong, Seo, Sunae, Choi, Rino, Lee, Byoung Hun

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Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors von Kang, Chang Goo, Lee, Young Gon, Lee, Sang Kyung, Park, Eunji, Cho, Chunhum, Lim, Sung Kwan, Hwang, Hyeon Jun, Lee, Byoung Hun

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Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure von Kim, Su Jin, Hwang, Seungkwon, Kwon, Jung-Dae, Yoon, Jongwon, Park, Jeong Min, Lee, Yongsu, Kim, Yonghun, Kang, Chang Goo

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE MoS2 stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Effects of multi-layer graphene capping on Cu interconnects von Kang, Chang Goo, Lim, Sung Kwan, Lee, Sangchul, Lee, Sang Kyung, Cho, Chunhum, Lee, Young Gon, Hwang, Hyeon Jun, Kim, Younghun, Choi, Ho Jun, Choe, Sun Hee, Ham, Moon-Ho, Lee, Byoung Hun

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Ferroelectric polymer-gated graphene memory with high speed conductivity modulation von Hwang, Hyeon Jun, Yang, Jin Ho, Lee, Young Gon, Cho, Chunhum, Kang, Chang Goo, Kang, Soo Cheol, Park, Woojin, Lee, Byoung Hun

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Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate von Lee, Sangchul, Iyore, Omokhodion David, Park, Saungeun, Lee, Young Gon, Jandhyala, Srikar, Kang, Chang Goo, Mordi, Greg, Kim, Yonghun, Quevedo-Lopez, Manuel, Gnade, Bruce E., Wallace, Robert M., Lee, Byoung Hun, Kim, Jiyoung

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Design and Optimization of an X-ray Detector Module for Air-Cargo Inspection von Choi, Hyojeong, Park, Jeong Min, Kang, Chang Goo, Kim, Su Jin, Kim, Byeong Hyeok, Mun, Jungho, Kim, Han Soo, Lee, Nam Ho, Kim, Young Soo

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Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors von Gon Lee, Young, Ji Kim, Yun, Goo Kang, Chang, Cho, Chunhum, Lee, Sangchul, Jun Hwang, Hyeon, Jung, Ukjin, Hun Lee, Byoung

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Characterization of In-House Fabricated Four-Channel Array Si PIN Photodetectors for Radiation-based Image Systems von Kang, Chang Goo, Kim, Su Jin, Kim, Byeong-Hyeok, Kim, Young Soo, Park, Jeong Min, Kim, Han Soo, Ha, Jang Ho, Choi, Hyojeong, Chae, Moonsik, Oh, Kyungmin, Lee, Byeongno, Lee, Nam-Ho

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Correlation between the hysteresis and the initial defect density of graphene von Cho, Chunhum, Gon Lee, Young, Jung, Ukjin, Goo Kang, Chang, Lim, Sungkwan, Jun Hwang, Hyeon, Choi, Hojun, Hun Lee, Byoung

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Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices von Lee, Sang Kyung, Kang, Chang Goo, Lee, Young Gon, Cho, Chunhum, Park, Eunji, Chung, Hyun Jong, Seo, Sunae, Lee, Hi-Deok, Lee, Byoung Hun

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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC von Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Lee, Seung Yong, Kang, Chang Goo, Hwang, Hyunsang, Lee, Byoung Hun

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